Datasheet > PTB20105

PTB20105

更新时间： 2024-11-17 22:26:11

品牌	Logo	应用领域
爱立信 - ERICSSON		晶体晶体管射频蜂窝无线
页数	文件大小	规格书
3页	49K
描述
20 Watts, 925-960 MHz Cellular Radio RF Power Transistor

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中文翻译

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技术参数
数据手册

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PTB20105 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	其他特性：	HIGH RELIABILITY
外壳连接：	EMITTER	最大集电极电流 (IC)：	5 A
集电极-发射极最大电压：	25 V	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-CDFM-F6	端子数量：	6
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

PTB20105 数据手册

PTB 20105

20 Watts, 925–960 MHz

Cellular Radio RF Power Transistor

Description

The 20105 is a class AB, NPN, common emitter RF power transistor

intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20

watts minimum output power, it may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization are used to ensure excellent device reliability. 100% lot

traceability is standard.

Class AB Characteristics

Performance at 960 MHz, 25 V_CC

- Output Power = 20 W

- Efficiency = 50% Min

Gold Metallization

Silicon Nitride Passivated

Output Power vs. Input Power

20105

LOT CODE

V_CC= 25 V

_CQ= 0.100 A

f = 960 MHz

Package 20201

Input Power (Watts)

Maximum Ratings

Parameter

Symbol

Value

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

CER

CBO

EBO

Emitter-Base Voltage (collector open)

Collector Current (continuous)

4.0

5.0

Total Device Dissipation at T

Above 25°C derate by

= 25°C

Watts

W/°C

flange

0.4

Storage Temperature Range

Thermal Resistance (T

–40 to +150

2.5

°C

STG

= 70°C)

°C/W

θJC

flange

9/28/98

12 3

中文翻译

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与PTB20105相关器件

型号	品牌	获取价格	描述	数据表
PTB20110	ERICSSON	获取价格	RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN
PTB20111	ERICSSON	获取价格	85 Watts, 860-900 MHz Cellular Radio RF Power Transistor
PTB20111	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
PTB20124	ERICSSON	获取价格	RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
PTB20125	ERICSSON	获取价格	100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor
PTB20134	ERICSSON	获取价格	30 Watts, 860-900 MHz Cellular Radio RF Power Transistor
PTB20135	ERICSSON	获取价格	85 Watts, 925-960 MHz Cellular Radio RF Power Transistor
PTB20141	ERICSSON	获取价格	18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
PTB20144	ERICSSON	获取价格	6 Watts, 915-960 MHz Cellular Radio RF Power Transistor
PTB20145	ERICSSON	获取价格	9 Watts, 915-960 MHz Cellular Radio RF Power Transistor