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PTB20081 PDF预览

PTB20081

更新时间: 2024-11-19 22:26:11
品牌 Logo 应用领域
爱立信 - ERICSSON 晶体晶体管电视放大器局域网
页数 文件大小 规格书
3页 389K
描述
150 Watts, 470-860 MHz UHF TV Power Transistor

PTB20081 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-CDFM-F4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.13
其他特性:HIGH RELIABILITY外壳连接:EMITTER
最大集电极电流 (IC):12 A集电极-发射极最大电压:25 V
配置:COMMON EMITTER, 2 ELEMENTS最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4元件数量:2
端子数量:4封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

PTB20081 数据手册

 浏览型号PTB20081的Datasheet PDF文件第2页浏览型号PTB20081的Datasheet PDF文件第3页 
e
PTB 20081  
150 Watts, 470–860 MHz  
UHF TV Power Transistor  
Description  
The 20081 is a class AB, NPN, common emitter RF power transistor  
intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF  
TV frequency band. It is rated at 100 watts minimum output power.  
Ion implantation, nitride surface passivation and gold metallization  
are used to ensure excellent device reliability. 100% lot traceability is  
standard.  
• 150 Watts (P-Sync), 470–860 MHz  
• Class AB Characteristics  
• 55% Collector Efficiency at 100 Watts (CW)  
• Guaranteed Performance at 28 Volts, 860 MHz  
- Output Power = 125 Watts (Peak Sync)  
- Output Power = 100 Watts (CW)  
- Minimum Gain = 8.5 dB  
• Guaranteed Performance at 32 Volts, 860 MHz  
- Output Power = 150 Watts (Peak Sync)  
Typical Gain vs. Frequency  
(as measured in a broadband circuit)  
10.0  
9.5  
9.0  
8.5  
20081  
LOT CODE  
VCC = 28 V  
CQ = 2 x 100 mA  
Pout = 100 W  
8.0  
I
7.5  
7.0  
470  
548  
626  
704  
782  
860  
Frequency (MHz)  
Package 20212  
Maximum Ratings  
Parameter  
Symbol  
Value  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
CER  
CBO  
EBO  
V
V
65  
Emitter-Base Voltage (collector open)  
Collector Current (continuous)  
4.0  
I
C
12  
Total Device Dissipation at T  
Above 25°C derate by  
= 25°C  
P
D
233  
Watts  
W/°C  
flange  
1.33  
Storage Temperature Range  
Thermal Resistance (T  
T
–40 to +150  
0.75  
°C  
STG  
= 70°C)  
R
°C/W  
θJC  
flange  
1
9/28/98  

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