Datasheet > PTB20080

PTB20080

更新时间： 2024-11-19 22:26:11

品牌	Logo	应用领域
爱立信 - ERICSSON		晶体晶体管射频
页数	文件大小	规格书
3页	448K
描述
25 Watts, 1.6-1.7 GHz RF Power Transistor

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PTB20080 数据手册

PTB 20080

25 Watts, 1.6–1.7 GHz

RF Power Transistor

Description

ThPTB 20080 is a classA/AB, NPN, silicon bipolar junction, internally-

matched RF power transistor intended for 26 Vdc operation from 1.6

to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP

applications. Ion implantation, nitride surface passivation and gold

metallization ensure excellent device reliability. 100% lot traceability

is standard.

25 Watts, 1.6–1.7 GHz

Class AB Characteristics

40% Collector Efficiency at 25 Watts

Gold Metallization

Silicon Nitride Passivated

Typical Output Power & Efficiency vs. Input Power

20080

EXXX

V_CC= 26 V

_CQ= 125 mA

f = 1.65 GHz

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Package 20209

Input Power (Watts)

Maximum Ratings

Parameter

Symbol

Value

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

CER

CBO

EBO

Emitter-Base Voltage (collector open)

Collector Current (continuous)

4.0

3.4

Total Device Dissipation at T

Above 25° C derate by

= 25° C

123

0.7

Watts

W/°C

flange

Storage Temperature Range

Thermal Resistance (T

150

°C

STG

= 70°C)

1.43

°C/W

θJC

flange

9/28/98

12 3

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