5秒后页面跳转
PTB20078 PDF预览

PTB20078

更新时间: 2024-11-17 22:26:11
品牌 Logo 应用领域
爱立信 - ERICSSON 晶体射频双极晶体管放大器
页数 文件大小 规格书
3页 196K
描述
2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor

PTB20078 技术参数

生命周期:Obsolete包装说明:CHIP CARRIER, R-CQCC-N3
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:EMITTER最大集电极电流 (IC):0.5 A
最高频带:L BANDJESD-30 代码:R-CQCC-N3
端子数量:3封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:QUAD晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

PTB20078 数据手册

 浏览型号PTB20078的Datasheet PDF文件第2页浏览型号PTB20078的Datasheet PDF文件第3页 
e
PTB 20078  
2.5 Watts, 1525–1660 MHz  
INMARSAT RF Power Transistor  
Description  
The 20078 is a class AB, NPN, common emitter RF power transistor  
intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5  
watts minimum output power, it may be used for both CW and PEP  
applications. Ion implantation, nitride surface passivation and gold  
metallization are used to ensure excellent device reliability. 100% lot  
traceability is standard.  
• 2.5 Watts, 1525–1660 MHz  
• Class AB Characteristics  
• Gold Metallization  
• Silicon Nitride Passivated  
• Surface Mountable  
• Available in Tape and Reel  
Typical Output Power vs. Input Power  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
20078  
LOT CODE  
VCC = 26 V  
CQ = 20 mA  
f = 1.66 GHz  
1.5  
1.0  
0.5  
0.0  
I
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
Package 20227  
Input Power (Watts)  
Maximum Ratings  
Parameter  
Symbol  
Value  
50  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
CER  
CBO  
EBO  
V
V
50  
Emitter-Base Voltage (collector open)  
Collector Current (continuous)  
4.0  
I
C
0.5  
Total Device Dissipation at T  
Above 25°C derate by  
= 25°C  
P
10.0  
Watts  
W/°C  
D
flange  
0.057  
Storage Temperature  
Thermal Resistance (T  
T
150  
°C  
stg  
= 70°C)  
R
θJC  
17.5  
°C/W  
flange  
1
9/28/98  

与PTB20078相关器件

型号 品牌 获取价格 描述 数据表
PTB20079 ERICSSON

获取价格

10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor
PTB20080 ERICSSON

获取价格

25 Watts, 1.6-1.7 GHz RF Power Transistor
PTB20081 ERICSSON

获取价格

150 Watts, 470-860 MHz UHF TV Power Transistor
PTB20082 ERICSSON

获取价格

15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
PTB20091 ERICSSON

获取价格

30 Watts, 470-860 MHz UHF TV Linear Power Transistor
PTB20095 ERICSSON

获取价格

15 Watts, 915-960 MHz Cellular Radio RF Power Transistor
PTB20097 ERICSSON

获取价格

40 Watts, 915-960 MHz Cellular Radio RF Power Transistor
PTB20101 ERICSSON

获取价格

175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor
PTB20101 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
PTB20105 ERICSSON

获取价格

20 Watts, 925-960 MHz Cellular Radio RF Power Transistor