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PTB20053 PDF预览

PTB20053

更新时间: 2024-11-17 22:26:11
品牌 Logo 应用领域
爱立信 - ERICSSON 晶体射频双极晶体管放大器蜂窝无线局域网
页数 文件大小 规格书
3页 50K
描述
60 Watts, 860-900 MHz Cellular Radio RF Power Transistor

PTB20053 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:EMITTER
最大集电极电流 (IC):8 A集电极-发射极最大电压:25 V
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F6
端子数量:6封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

PTB20053 数据手册

 浏览型号PTB20053的Datasheet PDF文件第2页浏览型号PTB20053的Datasheet PDF文件第3页 
e
PTB 20053  
60 Watts, 860–900 MHz  
Cellular Radio RF Power Transistor  
Description  
The 20053 is a class AB, NPN, common emitter RF power transistor  
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60  
watts minimum output power, it may be used for both CW and PEP  
applications. Ion implantation, nitride surface passivation and gold  
metallization are used to ensure excellent device reliability. 100% lot  
traceability is standard.  
• 60 Watts, 860–900 MHz  
• Class AB Characteristics  
• 50% Collector Efficiency at 60 Watts  
• Gold Metallization  
• Silicon Nitride Passivated  
Gain vs. Frequency  
(as measured in a broadband circuit)  
13  
VCC = 25 V  
CQ = 200 mA  
Pout = 60 W  
12  
11  
10  
9
I
20053  
LOT CODE  
8
7
850  
860  
870  
880  
890  
900  
910  
Package 20200  
Frequency (MHz)  
Maximum Ratings  
Parameter  
Symbol  
Value  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
CER  
CBO  
EBO  
V
V
65  
Emitter-Base Voltage (collector open)  
Collector Current (continuous)  
4.0  
I
C
8.0  
Total Device Dissipation at T  
Above 25°C derate by  
= 25°C  
P
145  
Watts  
W/°C  
D
flange  
0.83  
Storage Temperature Range  
Thermal Resistance (T  
T
–40 to +150  
1.2  
°C  
STG  
= 70°C)  
R
°C/W  
θJC  
flange  
1
9/28/98  

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