Datasheet > PTB20005

PTB20005

更新时间： 2024-11-17 22:26:11

品牌	Logo	应用领域
爱立信 - ERICSSON		晶体晶体管射频蜂窝无线
页数	文件大小	规格书
3页	48K
描述
15 Watts, 860-900 MHz Cellular Radio RF Power Transistor

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PTB20005 数据手册

PTB 20005

15 Watts, 860–900 MHz

Cellular Radio RF Power Transistor

Description

The 20005 is a class AB, NPN, common emitter RF power transistor

intended for 25 Vdc operation across the 860 to 900 MHz frequency

band. Rated at 15 watts minimum output power, it may be used for

both CW and PEP applications. Ion implantation, nitride surface

passivation and gold metallization are used to ensure excellent device

reliability. 100% lot traceability is standard.

15 Watts, 860–900 MHz

Class AB Characteristics

50% Collector Efficiency at 15 Watts

Gold Metallization

Silicon Nitride Passivated

Typical Output Power vs. Input Power

V_CC= 25 V

I_CQ= 100 mA

f = 900 MHz

20005

LOT CODE

0.0

0.4

0.8

1.2

1.6

2.0

Input Power (Watts)

Package 20201

Maximum Ratings

Parameter

Symbol

Value

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

CER

CBO

EBO

Emitter-Base Voltage (collector open)

Collector Current (continuous)

4.0

6.7

Total Device Dissipation at T

Above 25°C derate by

= 25°C

Watts

W/°C

flange

0.4

Storage Temperature Range

Thermal Resistance (T

–40 to +150

2.7

°C

STG

= 70°C)

°C/W

θJC

flange

9/28/98

12 3

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