Datasheet > PT8822

PT8822

更新时间： 2024-09-14 09:58:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		/
页数	文件大小	规格书
3页	2156K
描述
20 V Dual N-Channel Enhancement Mode MOSFET

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数据手册

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PT8822 数据手册

PT8822

20V Dual N-Channel Enhancement Mode MOSFET

VDS= 20V

RDS(ON), Vgs@1.8V, Ids@2A = 50mΩ

RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ

RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Ideal for Li ion battery pack applications

Package Dimensions

Millimeter

Min. Max.

1.10 MAX.

Millimeter

REF.

Min.

Max.

0.45 REF.

0.60 REF.

10°

0.10

1.00

0.70

0°

0.30

0.50

0.12 REF.

2.70

3.10

0.95 REF.

1.90 REF.

2.60

3.00

1.40

1.80

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 ^oC

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

± 12

I_DM

TA = 25^oC

TA = 75^oC

Maximum Power Dissipation

P_D

1.2

Operating Junction and Storage Temperature Range

Junction-to-Ambient Thermal Resistance (PCB mounted)

T_J, T_stg

R_q_JA

-55 to 150

62.5

^oC

^oC/W

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3

中文翻译

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