型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PT8810 | ETC |
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TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 3.4A I(C) | STX-8 |
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PT8810 | HTSEMI |
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封装形式 : TSSOP-8; 工艺 : 沟槽型; 沟道类型 : 双N; 防静电ESD : |
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PT8822 | HTSEMI |
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20 V Dual N-Channel Enhancement Mode MOSFET |
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PT8852 | ETC |
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TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 5A I(C) |
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PT8852A | ETC |
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TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 5A I(C) | STX-8 |
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PT8853 | ETC |
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TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 6A I(C) |
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PT8853A | ETC |
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TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 6A I(C) | STX-8 |
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PT8862 | ETC |
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TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 5A I(C) |
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PT8862A | ETC |
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TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 5A I(C) | STX-8 |
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PT8864 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 6A I(C) |
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