Datasheet > PT768

PT768

更新时间： 2022-11-21 22:21:10

品牌	Logo	应用领域
NIEC		二极管
页数	文件大小	规格书
3页	139K
描述
DIODE MODULE 75A/800V

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数据手册

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PT768 数据手册

DIODE MODULE 75A/800V

PT768

OUTLINE DRAWING

FEATURES

* Isolated Base

ﾈｼﾞ

* 3 Phase Bridge Circuit

* High Surge Capability

* UL Recognized, File No. E187184

TYPICAL APPLICATIONS

* Rectified For General Use

Maximum Ratings

Approx Net Weight:180g

Type / Grade

Symbol

Unit

Parameter

PT768

Repetitive Peak Reverse Voltage *1

Non Repetitive Peak Reverse Voltage *1

V_RRM

V_RSM

800

1000

Max Rated

Parameter

Unit

Conditions

3-Phase Full Wave Rectified

Tc=112°C

50 Hz Half Sine Wave,1Pulse

Non-repetitive

2msec to 10msec

Value

Average Rectified Output Current

Surge Forward Current *1

I_O(AV)

I_FSM

1000

I Squared t *1

I²t

5000

A²s

°C

Operating JunctionTemperature Range

Storage Temperature Range

Isoration Voltage

Tjw

Tstg

Viso

-40 to +150

-40 to +125

2000

Base Plate to Terminals, AC1min

Case mounting

Terminals

Greased

M5 Screw

2.4 to 2.8

Mounting torque

Ftor

N•m

Electrical • Thermal Characteristics

Symbol

I_RM

V_FMI_FM= 75A, Tj=25°C

Test Conditions

V_RM= V_RRM,Tj= 150°C

Max. Unit

Characteristics

Peak Reverse Current *1

Peak Forward Voltage *1

1.2

Rth(j-c) Junction to Case (Total)

0.24

Thermal Resistance

°C/W

Base Plate to Heat Sink with Thermal

Rth(c-f)

0.06

Compound (Total)

*1: Value Per 1Arm

12 3

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