PT550/PT550F
TO-18 Type Phototransistor
with Base Terminal
PT550/PT550F
(
)
■ Features
■ Outline Dimensions
Unit : mm
φ 4.7±
φ4.7±
1. High sensitivity
0.1
0.1
PT550 IC : MIN.3mA at E e = 0.1mW/cm2
φ 3.0± 0.1
(
PT550F IC : MIN.3mA at E e = 1mW/cm2
(
PT550
PT550F
2. Narrow acceptance : PT550
(
)
∆ θ : TYP. ± 6˚
Wide acceptance : PT550F
(
)
∆ θ : TYP. ± 50˚
3. TO - 18 type standard package
1
φ 0.45
φ 0.45
2.5
2.5
■ Applications
1. Optoelectronic switches, optoelectronic
2
2
φ 2.5
φ 2.5
3
3
2 3
counters
1
1
1.0
1.0
2. Smoke detectors
φ 5.7MAX.
φ 5.7MAX.
45 ˚
45 ˚
3. Infrared applied systems
(
)
2
1
Collector Case
Base 3 Emitter
(
)
■ Absolute Maximum Ratings
Ta = 25˚C
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector-base voltage
Collector current
Symbol
Rating
Unit
V
V CEO
V ECO
V CBO
IC
35
6
35
V
V
100
mA
mW
˚C
Collector power dissipation
Operating temperature
Storage temperature
PC
150
T opr
T stg
T sol
- 25 to + 125
- 55 to + 150
260
˚C
*1 Soldering temperature
˚C
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
(
)
■ Electro-optical Characteristics
Ta = 25˚C
Conditions
Parameter
*2Collector current
Symbol
MIN.
TYP.
MAX.
PT550
Unit
PT550
VCE = 5V
PT550F
VCE = 5V
Ee = 0.1mW/cm2 Ee = 1mW/cm2
VCE = 10V, Ee = 0, I B = 0
142
mA
IC
3
-
20
10- 7
-
PT550F 150
Collector dark current
Collecter-emitter saturation
voltage
ICEO
10-6
A
V
IC = 1mA, I B= 0 IC = 1mA, I B = 0
Ee = 0.1mW/cm2 Ee = 1mW/cm2
VCE
(
)
-
1.0
sat
Peak sensitivity wavelength
λ P
tr
-
-
-
800
350
300
-
-
-
nm
µs
µs
-
Response
time
Rise time
Fall time
V
CC = 15V, IC = 1mA, RL = 1kΩ
tf
(
)
*2 E e : Irradiance by CIE standard light source A tungsten lamp
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”