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PT4120

更新时间: 2024-01-03 09:36:31
品牌 Logo 应用领域
夏普 - SHARP 晶体光电晶体管光电晶体管
页数 文件大小 规格书
4页 52K
描述
Side View and Thin Flat Type 2-Phase Output Phototransistor

PT4120 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.81Is Samacsys:N
其他特性:SIDE VIEWColl-Emtr Bkdn Voltage-Min:35 V
配置:COMMON COLLECTOR, 2 ELEMENTS最大暗电源:100 nA
红外线范围:YES标称光电流:0.45 mA
功能数量:2最高工作温度:85 °C
最低工作温度:-25 °C光电设备类型:PHOTO TRANSISTOR
峰值波长:800 nm形状:RECTANGULAR
尺寸:4 mmBase Number Matches:1

PT4120 数据手册

 浏览型号PT4120的Datasheet PDF文件第2页浏览型号PT4120的Datasheet PDF文件第3页浏览型号PT4120的Datasheet PDF文件第4页 
PT4120  
Side View and Thin Flat Type  
2-Phase Output Phototransistor  
PT4120  
Features  
Outline Dimensions  
(Unit : mm)  
1.8  
1. 2-phase PT output type  
(Read pitch : 0.94 mm)  
2. Compact, thin and flat package  
Transparent  
epoxy resin  
2-C0.5  
PT B  
0.7  
3.0  
0.7  
4˚  
4˚  
PT A  
4˚  
MAX.0.1  
4˚  
0.15  
0.8  
(1.7)  
Applications  
1. Mouses  
MAX.  
Rugged resin 0.2  
56˚±  
5.0  
3-0.45+- 0.3  
0.1  
3-0.4+- 0.3  
0.1  
2. Track balls  
3. Encoders  
1
2
3
(2.54)  
(1.5)  
Shape of detector portion  
6˚  
6˚  
6˚  
6˚  
2.8  
0.81  
* Tolerance : ± 0.2 mm  
1
2
3
Emitter (PT A)  
Collector (common)  
Emitter (PT B)  
1
3
2
Absolute Maximum Ratings  
(Ta = 25˚C)  
Parameter  
Collector-emitter voltage  
Emitter-collector voltage  
Collector current  
Symbol  
Rating  
Unit  
V
VCEO  
VECO  
IC  
35  
6
V
20  
mA  
mW  
˚C  
Collector power dissipation  
Operating temperature  
Storage temperature  
PC  
75  
Topr  
Tstg  
Tsol  
- 25 to +85  
- 40 to +85  
260  
˚C  
Soldering area  
*1Soldering temperature  
˚C  
*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,  
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”  

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