Datasheet > PSTG75HST

PSTG75HST

更新时间： 2024-11-09 12:19:35

品牌	Logo	应用领域
POWERSEM		双极性晶体管栅
页数	文件大小	规格书
2页	152K
描述
Powerline N-Channel Trench Gate-IGBT Module

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中文翻译

获取价格

数据手册

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PSTG75HST 数据手册

ECO-PAC^TM1

Powerline N-Channel

Trench Gate-

PSTG 75HST12

V_CES

= 1200 V

IGBT Module

V_CE(sat)= 1.9 V

I_C25

I_C75

I_CM

t_SC

= 109 A

= 75 A

= 225 A

= 10 µs

Preliminary Data Sheet

Features

Symbol Test Conditions

Maximum Ratings

T_VJ= 25°C to 150°C

continous

1200

±20

109

V_CES

V_GES

I_C25

• Package with DCB ceramic base

plate and soldering pins for PCB

mounting

T_C= 25°C;

T_C= 75°C;

T_C= 75°C

V_CE= 80 V_CES, R_G= 10 Ω, V_GE= ±15 V

T_VJ= 125°C, non-repetitive

I_C75

• Isolation voltage over 3000 V∼

• Trench Gate

225

I_CM

• Enhancement Mode N-Channel

Device

136

P_tot

t_SC

• Non Punch through Structure

• High Switching Speed

• Low On-state Saturation Voltage

• High Input Impedance Simplifies

Gate Drive

-40...+150

-40...+125

0.55

µs

°C

K/W

T_VJ

T_stg

IGBT-per devices

Diode-per devices

I_ISOL≤ 1 mA, 50/60 Hz, t= 1 min

Mounting torque (M4)

R_thJC

V_ISOL

M_D

1.33

3000

• Latch-Free Operation

• Fully Short Circuit Rated to 10 µs

• Wide RBSOA

1.5-1.8

typ.

min.

11.2

4.0

Applications

Creepage distance on surface

Strike distance through air

typ.

d_S

d_A

• High Frequency Inverters

• Motor Control

Weight

• Switch Mode Power Supplies

• High Frequency Welding

• UPS Systems

• PWM Drives

Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling

precautions.

 2005 POWERSEM reserves the right to change limits, test conditions and dimensions

POWERSEM GmbH, Walpersdorfer Str. 53

91126 D- Schwabach

Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20

中文翻译

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