TM
ECO-PAC 2
IGBT Module
IC25
= 6 A
PSII 6/12*
Preliminary Data Sheet
VCES
= 1200 V
VCE(sat)typ. = 3.9 V
S9
X18
N9
R5
D5
L9
N5
A5
W14
H5
A1
C1
K10
F3
G1
PSII 6/12*
K13
K12
IGBT
*NTC optional
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
V
±
VGES
20
IC25
IC80
TC = 25°C
TC = 80°C
6
A
A
4.1
Features
ICM
VGE = 15/0 V; R = 89 Ω; TVJ = 125°C
9.6
A
µs
W
•
NPT IGBT’s
VCEK
RBSOA, ClampGed inductive load; L = 100 µH
VCES
10
- positive temperature coefficient of
saturation voltage
tSC
VCE = VCES; VGE = 15/0 V; RG = 89 Ω; TVJ = 125°C
- fast switching
(SCSOA)
non-repetitive
•
•
•
FRED diodes
Ptot
TC = 25°C
40
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
UL registered, E 148688
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VCE(sat)
IC = 4 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
3.9
4.6
4.6
V
V
Applications
•
•
AC drives
power supplies with power factor
correction
VGE(th)
ICES
IC = 0.1 mA; VGE = VCE
3
5
V
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
0.1 mA
mA
VCE = 960 V; VGE = 0 V; TVJ = 125°C
0.5
±
Advantages
IGES
VCE = 0 V; VGE
=
20 V
100 nA
•
•
•
Easy to mount with two screws
t
30
20
ns
ns
td(on)
Space and weight savings
Improved temperature and power
cycling capability
Inductive load, TVJ = 125°C
VCE = 600 V; I = 4 A
tr
290
90
ns
VGE = 15/0 V; CRG = 89 Ω
tdf (off)
Eon
Eoff
ns
•
•
High power density
0.4
0.2
mJ
mJ
Small and light weight
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 960 V; VGE = 15 V; IC = 2 A
205
11
pF
nC
QGon
RthJC
RthJH
(per IGBT)
3.1 K/W
K/W
(per IGBT) with heatsink compound
6.2
Caution: These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20