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PSII6/12 PDF预览

PSII6/12

更新时间: 2024-11-28 06:01:03
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
2页 103K
描述
IGBT Module

PSII6/12 数据手册

 浏览型号PSII6/12的Datasheet PDF文件第2页 
TM  
ECO-PAC 2  
IGBT Module  
IC25  
= 6 A  
PSII 6/12*  
Preliminary Data Sheet  
VCES  
= 1200 V  
VCE(sat)typ. = 3.9 V  
S9  
X18  
N9  
R5  
D5  
L9  
N5  
A5  
W14  
H5  
A1  
C1  
K10  
F3  
G1  
PSII 6/12*  
K13  
K12  
IGBT  
*NTC optional  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
V
V
±
VGES  
20  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
6
A
A
4.1  
Features  
ICM  
VGE = 15/0 V; R = 89 ; TVJ = 125°C  
9.6  
A
µs  
W
NPT IGBT’s  
VCEK  
RBSOA, ClampGed inductive load; L = 100 µH  
VCES  
10  
- positive temperature coefficient of  
saturation voltage  
tSC  
VCE = VCES; VGE = 15/0 V; RG = 89 ; TVJ = 125°C  
- fast switching  
(SCSOA)  
non-repetitive  
FRED diodes  
Ptot  
TC = 25°C  
40  
- fast reverse recovery  
- low forward voltage  
Industry Standard Package  
- solderable pins for PCB mounting  
- isolated DCB ceramic base plate  
UL registered, E 148688  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
VCE(sat)  
IC = 4 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
3.9  
4.6  
4.6  
V
V
Applications  
AC drives  
power supplies with power factor  
correction  
VGE(th)  
ICES  
IC = 0.1 mA; VGE = VCE  
3
5
V
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
0.1 mA  
mA  
VCE = 960 V; VGE = 0 V; TVJ = 125°C  
0.5  
±
Advantages  
IGES  
VCE = 0 V; VGE  
=
20 V  
100 nA  
Easy to mount with two screws  
t
30  
20  
ns  
ns  
td(on)  
Space and weight savings  
Improved temperature and power  
cycling capability  
Inductive load, TVJ = 125°C  
VCE = 600 V; I = 4 A  
tr  
290  
90  
ns  
VGE = 15/0 V; CRG = 89 Ω  
tdf (off)  
Eon  
Eoff  
ns  
High power density  
0.4  
0.2  
mJ  
mJ  
Small and light weight  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 960 V; VGE = 15 V; IC = 2 A  
205  
11  
pF  
nC  
QGon  
RthJC  
RthJH  
(per IGBT)  
3.1 K/W  
K/W  
(per IGBT) with heatsink compound  
6.2  
Caution: These devices are sensitive  
to electrostatic discharge. Users should  
observe proper ESD handling precautions.  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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