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PSII3X10/06 PDF预览

PSII3X10/06

更新时间: 2024-11-28 10:00:31
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
5页 141K
描述
IGBT Module

PSII3X10/06 数据手册

 浏览型号PSII3X10/06的Datasheet PDF文件第2页浏览型号PSII3X10/06的Datasheet PDF文件第3页浏览型号PSII3X10/06的Datasheet PDF文件第4页浏览型号PSII3X10/06的Datasheet PDF文件第5页 
TM  
ECO-PAC 1  
IGBT Module  
PSII 3x10/06  
IC25  
= 19 A  
Sixpack  
VCES  
= 600 V  
Preliminary Data Sheet  
VCE(sat)typ. = 1.9 V  
NTC  
L
2-3  
1/A  
6-7  
5/A  
K
H
A
1/H  
5/H  
G
4/N  
8/G  
N
8/N  
4/G  
IGBTs  
PSII 3x10/06  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
600  
V
V
±
VGES  
20  
Features  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
19  
14  
A
A
NPT IGBT’s  
- positive temperature coefficient of  
saturation voltage  
ICM  
VGE = ±15 V; RG = 82 ; TVJ = 125°C  
RBSOA, Clamped inductive load; L = 100 µH  
20  
A
µs  
W
- fast switching  
FRED diodes  
- fast reverse recovery  
- low forward voltage  
Industry Standard Package  
- solderable pins for PCB mounting  
- isolated DCB ceramic base plate  
UL registered, E 148688  
VCEK  
VCES  
tSC  
VCE = 720 V; VGE = ±15 V; RG = 82 ; TVJ = 125°C  
10  
73  
(SCSOA)  
non-repetitive  
Ptot  
TC = 25°C  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
Applications  
AC drives  
VCE(sat)  
IC = 10 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
1.9  
2.2  
2.4  
V
V
power supplies with power factor  
correction  
VGE(th)  
ICES  
IC = 0.35 mA; VGE = VCE  
4.5  
6.5  
V
Advantages  
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.6 mA  
2.7  
mA  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
cycling capability  
±
20 V  
IGES  
VCE = 0 V; VGE  
=
100 nA  
t
35  
35  
ns  
ns  
td(on)  
Inductive load, TVJ = 125°C  
VCE = 300 V; IC = 10 A  
VGE = ±15 V; RG = 82 Ω  
High power density  
Small and light weight  
tr  
230  
30  
ns  
tdf (off)  
Eon  
Eoff  
ns  
0.4  
0.3  
mJ  
mJ  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 300 V; VGE = 15 V; IC = 10 A  
600  
39  
pF  
nC  
QGon  
Caution: These devices are  
sensitive to electrostatic discharge.  
Users should observe proper ESD  
handling precautions.  
RthJC  
RthJH  
(per IGBT)  
1.7 K/W  
K/W  
with heatsink compound (0.42 K/m.K; 50 µm)  
3.4  
2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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