TM
ECO-PAC 1
IGBT Module
PSII 3x10/06
IC25
= 19 A
Sixpack
VCES
= 600 V
Preliminary Data Sheet
VCE(sat)typ. = 1.9 V
NTC
L
2-3
1/A
6-7
5/A
K
H
A
1/H
5/H
G
4/N
8/G
N
8/N
4/G
IGBTs
PSII 3x10/06
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
V
V
±
VGES
20
Features
IC25
IC80
TC = 25°C
TC = 80°C
19
14
A
A
•
NPT IGBT’s
- positive temperature coefficient of
saturation voltage
ICM
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
20
A
µs
W
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
UL registered, E 148688
VCEK
VCES
•
•
•
tSC
VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
10
73
(SCSOA)
non-repetitive
Ptot
TC = 25°C
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
Applications
•
•
AC drives
VCE(sat)
IC = 10 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
1.9
2.2
2.4
V
V
power supplies with power factor
correction
VGE(th)
ICES
IC = 0.35 mA; VGE = VCE
4.5
6.5
V
Advantages
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.6 mA
2.7
mA •
Easy to mount with two screws
•
•
Space and weight savings
Improved temperature and power
cycling capability
±
20 V
IGES
VCE = 0 V; VGE
=
100 nA
t
35
35
ns
ns
td(on)
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
•
•
High power density
Small and light weight
tr
230
30
ns
tdf (off)
Eon
Eoff
ns
0.4
0.3
mJ
mJ
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 10 A
600
39
pF
nC
QGon
Caution: These devices are
sensitive to electrostatic discharge.
Users should observe proper ESD
handling precautions.
RthJC
RthJH
(per IGBT)
1.7 K/W
K/W
with heatsink compound (0.42 K/m.K; 50 µm)
3.4
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20