5秒后页面跳转
PSII35-06 PDF预览

PSII35-06

更新时间: 2024-11-28 06:05:35
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
5页 141K
描述
IGBT Module

PSII35-06 数据手册

 浏览型号PSII35-06的Datasheet PDF文件第2页浏览型号PSII35-06的Datasheet PDF文件第3页浏览型号PSII35-06的Datasheet PDF文件第4页浏览型号PSII35-06的Datasheet PDF文件第5页 
TM  
ECO-PAC 2  
IGBT Module  
PSII 35/06  
IC25  
= 31 A  
Sixpack  
VCES  
= 600 V  
Preliminary Data Sheet  
VCE(sat)typ. = 1.9 V  
S9  
X18  
N9  
L9  
N5  
A5  
R5  
D5  
W14  
H5  
A1  
C1  
K10  
F3  
G1  
K13  
K12  
PSII 35/06  
IGBTs  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
600  
V
V
±
VGES  
20  
Features  
NPT IGBT’s  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
31  
21  
A
A
- positive temperature coefficient of  
saturation voltage  
ICM  
VGE = ±15 V; RG = 47 ; TVJ = 125°C  
40  
A
µs  
W
- fast switching  
FRED diodes  
- fast reverse recovery  
- low forward voltage  
Industry Standard Package  
- solderable pins for PCB mounting  
- isolated DCB ceramic base plate  
UL registered, E 148688  
VCEK  
RBSOA, Clamped inductive load; L = 100 µH  
VCES  
tSC  
VCE = 600 V; VGE = ±15 V; RG = 47 ; TVJ = 125°C  
10  
(SCSOA)  
non-repetitive  
Ptot  
TC = 25°C  
100  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ. max.  
AC drives  
power supplies with power factor  
correction  
VCE(sat)  
IC = 20 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
1.9  
2.2  
2.4  
V
V
VGE(th)  
ICES  
IC = 0.5 mA; VGE = VCE  
4.5  
6.5  
V
Advantages  
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.6 mA  
mA  
Easy to mount with two screws  
0.7  
Space and weight savings  
Improved temperature and power  
cycling capability  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
100 nA  
t
50  
55  
ns  
ns  
td(on)  
High power density  
Inductive load, TVJ = 125°C  
VCE = 300 V; IC = 10 A  
VGE = ±15 V; RG = 82 Ω  
tr  
300  
30  
ns  
Small and light weight  
tdf (off)  
Eon  
Eoff  
ns  
0.9  
0.7  
mJ  
mJ  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 300 V; VGE = 15 V; IC = 20 A  
1100  
65  
pF  
nC  
QGon  
RthJC  
RthJH  
(per IGBT)  
1.3 K/W  
K/W  
with heatsink compound (0.42 K/m.K; 50 µm)  
2.5  
Caution: These devices are sensitive  
to electrostatic discharge. Users should  
observe proper ESD handling precautions.  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

与PSII35-06相关器件

型号 品牌 获取价格 描述 数据表
PSII3X10 POWERSEM

获取价格

IGBT Module
PSII3X10/06 POWERSEM

获取价格

IGBT Module
PSII50/06 POWERSEM

获取价格

IGBT Module
PSII50-06 POWERSEM

获取价格

IGBT Module
PSII6/12 POWERSEM

获取价格

IGBT Module
PSII6-12 POWERSEM

获取价格

IGBT Module
PSII75/06 POWERSEM

获取价格

IGBT Module
PSII75/12 POWERSEM

获取价格

IGBT Module
PSII75-06 POWERSEM

获取价格

IGBT Module
PSII75-12 POWERSEM

获取价格

IGBT Module