TM
ECO-PAC 2
IGBT Module
PSII 35/06
IC25
= 31 A
Sixpack
VCES
= 600 V
Preliminary Data Sheet
VCE(sat)typ. = 1.9 V
S9
X18
N9
L9
N5
A5
R5
D5
W14
H5
A1
C1
K10
F3
G1
K13
K12
PSII 35/06
IGBTs
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
V
V
±
VGES
20
Features
•
NPT IGBT’s
IC25
IC80
TC = 25°C
TC = 80°C
31
21
A
A
- positive temperature coefficient of
saturation voltage
ICM
VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
40
A
µs
W
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
UL registered, E 148688
VCEK
RBSOA, Clamped inductive load; L = 100 µH
VCES
•
•
•
tSC
VCE = 600 V; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
10
(SCSOA)
non-repetitive
Ptot
TC = 25°C
100
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
Applications
min.
typ. max.
•
•
AC drives
power supplies with power factor
correction
VCE(sat)
IC = 20 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
1.9
2.2
2.4
V
V
VGE(th)
ICES
IC = 0.5 mA; VGE = VCE
4.5
6.5
V
Advantages
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.6 mA
mA
•
•
•
Easy to mount with two screws
0.7
Space and weight savings
Improved temperature and power
cycling capability
±
IGES
VCE = 0 V; VGE
=
20 V
100 nA
t
50
55
ns
ns
td(on)
•
•
High power density
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
tr
300
30
ns
Small and light weight
tdf (off)
Eon
Eoff
ns
0.9
0.7
mJ
mJ
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 20 A
1100
65
pF
nC
QGon
RthJC
RthJH
(per IGBT)
1.3 K/W
K/W
with heatsink compound (0.42 K/m.K; 50 µm)
2.5
Caution: These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20