ECO-PACTM 2
IGBT Module
IC25
= 18 A
PSII 15/12*
Preliminary Data Sheet
VCES
= 1200 V
VCE(sat)typ. = 2.3 V
S9
X18
N9
R5
D5
L9
N5
A5
W14
H5
A1
C1
K10
F3
G1
PSII 15/12*
K13
K12
IGBTs
*NTC optional
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
±
VGES
IC25
20
18
14
V
A
A
TC = 25°C
TC = 80°C
IC80
ICM
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
non-repetitive
20
A
µs
W
VCEK
VCES
10
Features
tSC
•
NPT IGBT’s
(SCSOA)
- positive temperature coefficient
of saturation voltage
- fast switching
Ptot
TC = 25°C
90
•
•
FRED diodes
Symbol
VCE(sat)
Conditions
Characteristic Values
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB
mounting
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
IC = 10 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.3
2.7
V
V
2.7
- isolated DCB ceramic base plate
VGE(th)
ICES
IC = 0.4 mA; VGE = VCE
4.5
6.5
0.5 mA
V
•
UL registered, E 148688
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.8
mA
Applications
±
IGES
VCE = 0 V; VGE
=
20 V
200 nA
•
•
AC drives
t
50
40
ns
td(on)
ns
power supplies with power factor
correction
tr
290
60
ns
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
tdf (off)
Eon
Eoff
ns
Advantages
1.2
1.1
600
45
mJ
•
•
•
Easy to mount with two screws
mJ
Space and weight savings
Improved temperature and power
cycling capability
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 10 A
pF
nC
QGon
RthJC
RthJH
(per IGBT)
1.4 K/W
•
•
High power density
Small and light weight
(per IGBT) with heatsink compound
2.7
K/W
Caution: These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20