IGBT Module
IC80
=
=
=
90 A
1200 V
2.8 V
PSII 100/12*
VCES
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
VCE(sat)typ.
S15
R15
ECO-TOPTM 1
A15
A7
G15
V12
V13
N15
V9
A9
V10
D1
A1
U1
V1
K1
G1
Q1
N1
typical picture, for pin
configuration see outline
drawing
V3
V6
IGBTs
*NTC optional
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
V
±
VGES
20
IC25
IC80
TC = 25°C
TC = 80°C
130
90
A
A
ICM
VGE = ±15 V; RG = 15 Ω; TVJ = 125°C
150
A
µs
W
VCEK
RBSOA, Clamped inductive load; L = 100 µH
VCES
tSC
VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C
10
(SCSOA)
non-repetitive
Ptot
TC = 25°C
568
Features
•
Package with DCB ceramic
base plate
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
•
•
•
•
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
min.
typ. max.
VCE(sat)
IC = 125 A; VGE = 15 V; TVJ
=
25°C
2.8
3.2
3.4
V
V
TVJ = 125°C
VGE(th)
ICES
IC = 3 mA; VGE = VCE
4.5
6.5
5
V
•
UL Release applied
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
mA
Applications
16 mA
•
•
•
•
AC and DC motor control
±
IGES
VCE = 0 V; VGE
=
20 V
320 nA
AC servo and robot drives
Power supplies
t
100
50
ns
ns
td(on)
Welding inverters
Inductive load, TVJ = 125°C
VCE = 600 V; I = 75 A
tr
650
50
ns
VGE = 15/0 V; CRG = 15 Ω
tdf (off)
Eon
Eoff
ns
Advantages
12.1
10.5
mJ
mJ
•
•
•
Easy to mount with four screws
Space and weight savings
Improved temperature and
power cycling capability
High power density
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
5.5
nF
RthJC
RthJH
(per IGBT)
0.22 K/W
K/W
•
•
with heatsink compound (0.42 K/m.K; 50 µm)
0.44
Small and light weight
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20