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PSII100/12 PDF预览

PSII100/12

更新时间: 2024-11-25 06:05:35
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
4页 484K
描述
IGBT Module

PSII100/12 数据手册

 浏览型号PSII100/12的Datasheet PDF文件第2页浏览型号PSII100/12的Datasheet PDF文件第3页浏览型号PSII100/12的Datasheet PDF文件第4页 
IGBT Module  
IC80  
=
=
=
90 A  
1200 V  
2.8 V  
PSII 100/12*  
VCES  
Short Circuit SOA Capability  
Square RBSOA  
Preliminary Data Sheet  
VCE(sat)typ.  
S15  
R15  
ECO-TOPTM 1  
A15  
A7  
G15  
V12  
V13  
N15  
V9  
A9  
V10  
D1  
A1  
U1  
V1  
K1  
G1  
Q1  
N1  
typical picture, for pin  
configuration see outline  
drawing  
V3  
V6  
IGBTs  
*NTC optional  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
V
V
±
VGES  
20  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
130  
90  
A
A
ICM  
VGE = ±15 V; RG = 15 ; TVJ = 125°C  
150  
A
µs  
W
VCEK  
RBSOA, Clamped inductive load; L = 100 µH  
VCES  
tSC  
VCE = VCES; VGE = ±15 V; RG = 15 ; TVJ = 125°C  
10  
(SCSOA)  
non-repetitive  
Ptot  
TC = 25°C  
568  
Features  
Package with DCB ceramic  
base plate  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Isolation voltage 3000 V  
Planar glass passivated chips  
Low forward voltage drop  
Leads suitable for PC board  
soldering  
min.  
typ. max.  
VCE(sat)  
IC = 125 A; VGE = 15 V; TVJ  
=
25°C  
2.8  
3.2  
3.4  
V
V
TVJ = 125°C  
VGE(th)  
ICES  
IC = 3 mA; VGE = VCE  
4.5  
6.5  
5
V
UL Release applied  
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
mA  
Applications  
16 mA  
AC and DC motor control  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
320 nA  
AC servo and robot drives  
Power supplies  
t
100  
50  
ns  
ns  
td(on)  
Welding inverters  
Inductive load, TVJ = 125°C  
VCE = 600 V; I = 75 A  
tr  
650  
50  
ns  
VGE = 15/0 V; CRG = 15 Ω  
tdf (off)  
Eon  
Eoff  
ns  
Advantages  
12.1  
10.5  
mJ  
mJ  
Easy to mount with four screws  
Space and weight savings  
Improved temperature and  
power cycling capability  
High power density  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
5.5  
nF  
RthJC  
RthJH  
(per IGBT)  
0.22 K/W  
K/W  
with heatsink compound (0.42 K/m.K; 50 µm)  
0.44  
Small and light weight  
Caution: These Devices are sensitive  
to electrostatic discharge. Users should  
observe proper ESD handling precautions.  
2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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