IGBT Module
PSII 100/06*
IC80
CES
VCE(sat)typ.
=
=
=
80 A
600 V
2.3 V
V
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
ECO-TOPTM 1
S15
R15
A15
A7
G15
V12
V13
N15
V9
A9
V10
D1
A1
U1
V1
K1
G1
Q1
N1
typical picture, for pin
V3
V6
configuration see outline
drawing
IGBTs
Symbol
VCES
Conditions
Maximum Ratings
600
*NTC optional
TVJ = 25°C to 150°C
V
±
VGES
20
V
Features
IC25
IC80
TC = 25°C
TC = 80°C
120
80
A
A
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
ICM
VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C
200
360
A
V
VCEK
RBSOA, Clamped inductive load; L = 100 µH
tSC
VCE = VCES; VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C
10
µs
(SCSOA)
non-repetitive
•
UL Release applied
Ptot
TC = 25°C
379
W
Applications
Symbol
Conditions
Characteristic Values
•
•
•
•
AC and DC motor control
(TVJ = 25°C, unless otherwise specified)
AC servo and robot drives
Power supplies
Welding inverters
min.
typ. max.
VCE(sat)
IC = 130 A; VGE = 15 V; TVJ
=
25°C
2.3
2.6
2.9
V
V
TVJ = 125°C
Advantages
VGE(th)
ICES
IC = 1.5 mA; VGE = VCE
4.5
6.5
V
•
•
•
Easy to mount with four screws
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
1.2 mA
7.5 mA
Space and weight savings
Improved temperature and power
cycling capability
±
IGES
VCE = 0 V; VGE
=
20 V
400 nA
•
•
•
High power density
t
25
11
ns
ns
td(on)
Small and light weight
Leads with expansion bend for
stress relief
Inductive load, TVJ = 125°C
VCE = 300 V; I = 80 A
tr
150
30
ns
VGE = 15/0 V; CRG = 2.2 Ω
tdf (off)
Eon
Eoff
ns
0.8
2.3
mJ
mJ
Caution: These Devices are
sensitive to electrostatic discharge.
Users should observe proper ESD
handling precautions.
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
4.2
nF
RthJC
RthJH
(per IGBT)
0.33 K/W
K/W
with heatsink compound (0.42 K/m.K; 50 µm)
0.66
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20