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PSII100/06 PDF预览

PSII100/06

更新时间: 2024-11-28 06:05:35
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
2页 463K
描述
IGBT Module

PSII100/06 数据手册

 浏览型号PSII100/06的Datasheet PDF文件第2页 
IGBT Module  
PSII 100/06*  
IC80  
CES  
VCE(sat)typ.  
=
=
=
80 A  
600 V  
2.3 V  
V
Short Circuit SOA Capability  
Square RBSOA  
Preliminary Data Sheet  
ECO-TOPTM 1  
S15  
R15  
A15  
A7  
G15  
V12  
V13  
N15  
V9  
A9  
V10  
D1  
A1  
U1  
V1  
K1  
G1  
Q1  
N1  
typical picture, for pin  
V3  
V6  
configuration see outline  
drawing  
IGBTs  
Symbol  
VCES  
Conditions  
Maximum Ratings  
600  
*NTC optional  
TVJ = 25°C to 150°C  
V
±
VGES  
20  
V
Features  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
120  
80  
A
A
Package with DCB ceramic base plate  
Isolation voltage 3000 V  
Planar glass passivated chips  
Low forward voltage drop  
Leads suitable for PC board  
soldering  
ICM  
VGE = ±15 V; RG = 2.2 ; TVJ = 125°C  
200  
360  
A
V
VCEK  
RBSOA, Clamped inductive load; L = 100 µH  
tSC  
VCE = VCES; VGE = ±15 V; RG = 2.2 ; TVJ = 125°C  
10  
µs  
(SCSOA)  
non-repetitive  
UL Release applied  
Ptot  
TC = 25°C  
379  
W
Applications  
Symbol  
Conditions  
Characteristic Values  
AC and DC motor control  
(TVJ = 25°C, unless otherwise specified)  
AC servo and robot drives  
Power supplies  
Welding inverters  
min.  
typ. max.  
VCE(sat)  
IC = 130 A; VGE = 15 V; TVJ  
=
25°C  
2.3  
2.6  
2.9  
V
V
TVJ = 125°C  
Advantages  
VGE(th)  
ICES  
IC = 1.5 mA; VGE = VCE  
4.5  
6.5  
V
Easy to mount with four screws  
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
1.2 mA  
7.5 mA  
Space and weight savings  
Improved temperature and power  
cycling capability  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
400 nA  
High power density  
t
25  
11  
ns  
ns  
td(on)  
Small and light weight  
Leads with expansion bend for  
stress relief  
Inductive load, TVJ = 125°C  
VCE = 300 V; I = 80 A  
tr  
150  
30  
ns  
VGE = 15/0 V; CRG = 2.2 Ω  
tdf (off)  
Eon  
Eoff  
ns  
0.8  
2.3  
mJ  
mJ  
Caution: These Devices are  
sensitive to electrostatic discharge.  
Users should observe proper ESD  
handling precautions.  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
4.2  
nF  
RthJC  
RthJH  
(per IGBT)  
0.33 K/W  
K/W  
with heatsink compound (0.42 K/m.K; 50 µm)  
0.66  
2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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