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PSIG75/06 PDF预览

PSIG75/06

更新时间: 2024-11-28 06:05:35
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
4页 205K
描述
IGBT Module

PSIG75/06 数据手册

 浏览型号PSIG75/06的Datasheet PDF文件第2页浏览型号PSIG75/06的Datasheet PDF文件第3页浏览型号PSIG75/06的Datasheet PDF文件第4页 
TM  
ECO-PAC 2  
IGBT Module  
IC25  
= 69 A  
PSIG 75/06  
PSI 75/06*  
PSIS 75/06*  
PSSI 75/06*  
AC 1  
VCES  
= 600 V  
Preliminary Data Sheet  
VCE(sat)typ. = 2.3 V  
X15  
OP 9  
X13  
IK 10  
NTC  
L9  
L9  
T16  
X15  
E2  
GH 10  
NTC  
X15  
X16  
L9  
F1  
K10  
X16  
NTC  
VX 18  
IK 10  
AC 1  
X16  
PSIS 75/06*  
PSSI 75/06*  
PSI 75/06*  
IGBTs  
A IJK  
S
LMN  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
600  
V
V
±
VGES  
20  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
69  
48  
A
A
PSIG 75/06*  
ICM  
VGE = ±15 V; RG = 22 ; TVJ = 125°C  
100  
A
µs  
W
VCEK  
RBSOA, Clamped inductive load; L = 100 µH  
VCES  
*NTC optional  
tSC  
VCE = VCES; VGE = ±15 V; RG = 22 ; TVJ = 125°C  
10  
(SCSOA)  
non-repetitive  
Features  
Ptot  
TC = 25°C  
208  
Package with DCB ceramic  
base plate  
Isolation voltage 3000 V  
Planar glass passivated chips  
Low forward voltage drop  
Leads suitable for PC board  
soldering  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
VCE(sat)  
IC = 75 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.3  
2.8  
2.8  
V
V
UL registered, E 148688  
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
4.5  
6.5  
V
Applications  
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.8 mA  
4.4 mA  
AC and DC motor control  
AC servo and robot drives  
power supplies  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
100 nA  
welding inverters  
t
50  
55  
ns  
ns  
td(on)  
tr  
300  
30  
ns  
Inductive load, TVJ = 125°C  
VCE = 300 V; I = 40 A  
Advantages  
tdf (off)  
Eon  
Eoff  
ns  
Easy to mount with two screws  
VGE = 15/0 V; CRG = 22 Ω  
1.8  
1.4  
mJ  
mJ  
Space and weight savings  
Improved temperature and  
power cycling capability  
High power density  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
2.8  
nF  
RthJC  
RthJH  
(per IGBT)  
0.6 K/W  
K/W  
Small and light weight  
with heatsink compound (0.42 K/m.K; 50 µm)  
1.2  
Caution: These Devices are sensitive  
to electrostatic discharge. Users should  
observe proper ESD handling precautions.  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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