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PSIG50/12 PDF预览

PSIG50/12

更新时间: 2024-11-28 06:05:35
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
4页 293K
描述
IGBT Module

PSIG50/12 数据手册

 浏览型号PSIG50/12的Datasheet PDF文件第2页浏览型号PSIG50/12的Datasheet PDF文件第3页浏览型号PSIG50/12的Datasheet PDF文件第4页 
ECO-PACTM 2  
IGBT Module  
IC25  
VCES  
VCE(sat)typ. = 3.1 V  
= 49 A  
= 1200 V  
PSIG 50/12  
PSI 50/12*  
PSIS 50/12*  
PSSI 50/12*  
Short Circuit SOA Capability  
Square RBSOA  
Preliminary Data Sheet  
LN 9 S18  
A1  
JK 10  
PSIG  
O P 9  
G H 1 0  
V X 1 8  
PSI  
L 9  
E 2  
PSI 50/12*  
PSIS 50/12*  
PSIG 50/12  
IGBTs  
PSSI 50/12*  
X 1 3  
K 1 0  
X 1 6  
N T C  
*NTC optional  
X 1 5  
X 15  
NTC  
IK 10  
PSSI  
Symbol  
VCES  
Conditions  
Maximum Ratings  
RS 18  
X 16  
L 9  
TVJ = 25°C to 150°C  
1200  
20  
V
V
VGES  
F 1  
AC 1  
AC 1  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
49  
33  
A
A
ICM  
VCEK  
VGE = 15 V; RG = 47 ; TVJ = 125°C  
RBSOA, Clamped inductive load; L = 100 µH  
50  
VCES  
A
µs  
W
PSIS  
L 9  
T 16  
tSC  
(SCSOA)  
VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125°C  
non-repetitive  
10  
RS 18  
IK 10  
X 15  
NTC  
Ptot  
TC = 25°C  
208  
X 16  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Features  
Package with DCB ceramic base plate  
Isolation voltage 3000 V  
Planar glass passivated chips  
Low forward voltage drop  
Leads suitable for PC board  
soldering  
min.  
typ. max.  
VCE(sat)  
IC = 50 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
3.1  
3.5  
3.7  
V
V
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
1.1 mA  
4.2 mA  
UL registered, E 148688  
IGES  
VCE = 0 V; VGE  
=
20 V  
180 nA  
Applications  
AC and DC motor control  
td(on)  
tr  
td(off)  
tf  
100  
70  
500  
70  
ns  
ns  
ns  
ns  
AC servo and robot drives  
power supplies  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 30 A  
VGE = 15/0 V; RG = 47 Ω  
welding inverters  
Eon  
Eoff  
4.6  
3.4  
mJ  
mJ  
Advantages  
Easy to mount with two screws  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
1.65  
nF  
Space and weight savings  
Improved temperature and power  
cycling capability  
RthJC  
RthJH  
(per IGBT)  
with heatsink compound (0.42 K/m.K; 50 µm)  
0.6 K/W  
K/W  
1.2  
High power density  
Caution: These Devices are sensitive  
to electrostatic discharge. Users should  
observe proper ESD handling precautions.  
Small and light weight  
Leads with expansion bend for  
stress relief  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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