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PSIG25-12 PDF预览

PSIG25-12

更新时间: 2024-11-25 12:19:47
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
4页 283K
描述
IGBT Module

PSIG25-12 数据手册

 浏览型号PSIG25-12的Datasheet PDF文件第2页浏览型号PSIG25-12的Datasheet PDF文件第3页浏览型号PSIG25-12的Datasheet PDF文件第4页 
ECO-PACTM 2  
IGBT Module  
Short Circuit SOA Capability  
Square RBSOA  
IC25  
VCES  
VCE(sat)typ. = 2.6 V  
= 30 A  
= 1200 V  
PSIG 25/12  
PSI 25/12*  
PSIS 25/12*  
PSSI 25/12*  
Preliminary Data Sheet  
LN9 S18  
A1  
JK10 PSIG  
P 9  
PSI  
L 9  
E 2  
PSI 25/12*  
PSIS 25/12*  
PSIG 25/12  
IGBTs  
PSSI 25/12*  
G 10  
X 13  
NTC  
*NTC optional  
K 10  
X 16  
X 15  
X 18  
Symbol  
VCES  
Conditions  
Maximum Ratings  
X 15  
NTC  
TVJ = 25°C to 150°C  
1200  
V
V
IK 10  
PSSI  
VGES  
20  
RS 18  
X 16  
L 9  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
30  
21  
A
A
F 1  
ICM  
VCEK  
VGE = 15 V; RG = 82 ; TVJ = 125°C  
35  
A
µs  
W
AC 1  
AC 1  
RBSOA, Clamped inductive load; L = 100 µH  
VCES  
tSC  
(SCSOA)  
VCE = VCES; VGE = 15 V; RG = 82 ; TVJ = 125°C  
10  
PSIS  
non-repetitive  
L 9  
T 16  
Ptot  
TC = 25°C  
130  
RS 18  
IK 10  
X 15  
NTC  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
X 16  
Features  
Package with DCB ceramic base plate  
Isolation voltage 3000 V  
Planar glass passivated chips  
Low forward voltage drop  
Leads suitable for PC board  
soldering  
VCE(sat)  
IC = 25 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.6  
2.9  
3.3  
V
V
VGE(th)  
ICES  
IC = 0.6 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.9 mA  
3.7 mA  
UL registered, E 148688  
IGES  
VCE = 0 V; VGE  
=
20 V  
100 nA  
Applications  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
100  
75  
ns  
ns  
AC and DC motor control  
AC servo and robot drives  
power supplies  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 17.5 A  
VGE = 15/0 V; RG = 82 Ω  
500  
70  
ns  
ns  
welding inverters  
2.7  
2.1  
mJ  
mJ  
Advantages  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
1
nF  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
cycling capability  
RthJC  
RthJH  
(per IGBT)  
0.96 K/W  
K/W  
with heatsink compound (0.42 K/m.K; 50 µm)  
1.92  
High power density  
Caution: These Devices are sensitive  
to electrostatic discharge. Users should  
observe proper ESD handling precautions.  
Small and light weight  
Leads with expansion bend for  
stress relief  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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