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PSIG130/06 PDF预览

PSIG130/06

更新时间: 2024-11-25 07:03:39
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
2页 174K
描述
IGBT Module

PSIG130/06 数据手册

 浏览型号PSIG130/06的Datasheet PDF文件第2页 
ECO-PACTM 2  
IGBT Module  
PSIG 130/06  
PSIS 130/06*  
PSSI 130/06*  
PSI 130/06*  
IC25  
= 121 A  
VCES  
= 600 V  
VCE(sat)typ. = 2.3 V  
Short Circuit SOA Capability  
Square RBSOA  
Preliminary Data Sheet  
X15  
AC 1  
OP 9  
IK 10  
L9  
NTC  
X16  
X13  
NTC  
X15  
L9  
T16  
X15  
E2  
GH 10  
VX 18  
K10  
X16  
L9  
NTC  
X16  
F1  
IK 10  
AC 1  
PSI 130/06*  
PSIS 130/06*  
PSSI 130/06*  
*NTC optional  
IGBTs  
A IJK  
S
LMN  
Symbol  
VCES  
Conditions  
Maximum Ratings  
600  
TVJ = 25°C to 150°C  
V
±
VGES  
20  
V
PSIG 130/06  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
121  
83  
A
A
Features  
ICM  
VGE = ±15 V; RG = 2.2 ; TVJ = 125°C  
200  
360  
A
V
Package with DCB ceramic base plate  
Isolation voltage 3000 V  
Planar glass passivated chips  
Low forward voltage drop  
Leads suitable for PC board  
soldering  
VCEK  
RBSOA, Clamped inductive load; L = 100 µH  
tSC  
VCE = VCES; VGE = ±15 V; RG = 2.2 ; TVJ = 125°C  
10  
µs  
(SCSOA)  
non-repetitive  
Ptot  
TC = 25°C  
379  
W
UL registered, E 148688  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ. max.  
AC and DC motor control  
AC servo and robot drives  
power supplies  
VCE(sat)  
IC = 130 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.3  
2.6  
2.9  
V
V
welding inverters  
VGE(th)  
ICES  
IC = 1.5 mA; VGE = VCE  
4.5  
6.5  
V
Advantages  
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
1.2 mA  
7.5 mA  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
cycling capability  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
400 nA  
t
25  
11  
ns  
ns  
td(on)  
Inductive load, TVJ = 125°C  
VCE = 300 V; I = 80 A  
High power density  
tr  
150  
30  
ns  
VGE = 15/0 V; CRG = 2.2 Ω  
Small and light weight  
Leads with expansion bend for  
stress relief  
tdf (off)  
Eon  
Eoff  
ns  
0.8  
2.3  
mJ  
mJ  
Caution: These Devices are  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
4.2  
nF  
sensitive to electrostatic discharge.  
RthJC  
RthJH  
(per IGBT)  
0.33 K/W Users should observe proper ESD  
with heatsink compound (0.42 K/m.K; 50 µm)  
0.66  
K/W  
handling precautions.  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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