Datasheet > PSHI100-06

PSHI100-06

更新时间： 2024-09-13 06:05:35

品牌	Logo	应用领域
POWERSEM		双极性晶体管
页数	文件大小	规格书
4页	132K
描述
IGBT Module H-Bridge Configuration

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中文翻译

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数据手册

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PSHI100-06 数据手册

ECO-PAC 2

IGBT Module

PSHI 100/06*

I_C25

= 69 A

H-Bridge Configuration

V_CES

= 600 V

V_CE(sat)typ.= 2.3 V

Preliminary Data Sheet

Short Circuit SOA Capability

Square RBSOA

F10

K10

K13

H13

S18

PSHI 100/06*

P18

NTC

IGBTs

*NTC optional

Symbol

V_CES

Conditions

Maximum Ratings

600

Features

•

NPT IGBT technology

T_VJ= 25°C to 150°C

low saturation voltage

V_GES

low switching losses

I_C25

I_C80

T_C= 25°C

T_C= 80°C

square RBSOA, no latch up

high short circuit capability

positive temperature coefficient for

easy parallelling

I_CM

V_GE= ±15 V; R_G= 22 Ω; T_VJ= 125°C

100

µs

V_CEK

RBSOA, Clamped inductive load; L = 100 µH

V_CES

•

MOS input, voltage controlled

ultra fast free wheeling diodes

solderable pins for PCB mounting

package with copper base plate

Isolation voltage 3000 V

t_SC

V_CE= V_CES; V_GE= ±15 V; R_G= 22 Ω; T_VJ= 125°C

(SCSOA)

non-repetitive

P_tot

T_C= 25°C

208

UL registered, E 148688

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

Advantages

min.

typ. max.

•

space and weight savings

V_CE(sat)

I_C= 75 A; V_GE= 15 V; T_VJ= 25°C

T_VJ= 125°C

2.3

2.8

reduced protection circuits

package designed for wave

soldering

V_GE(th)

I_CES

I_C= 1 mA; V_GE= V_CE

4.5

6.5

•

High power density

V_CE= V_CES

;

V_GE= 0 V; T_VJ= 25°C

T_VJ= 125°C

0.8 mA

4.4 mA

Easy to mount with two screws

Typical Applications

I_GES

V_CE= 0 V; V_GE

20 V

100 nA

•

motor control

t^d(on)

- DC motor armature winding

- DC motor excitation winding

- synchronous motor excitation winding

supply of transformer primary winding

- power supplies

Inductive load, T_VJ= 125°C

V_CE= 300 V; I = 40 A

t^r

300

V_GE= 15/0 V; ^CR_G= 22 Ω

t^d_f^(off)

E_on

E_off

•

1.8

1.4

- welding

C_ies

V_CE= 25 V; V_GE= 0 V; f = 1 MHz

2.8

-X-ray

- UPS

R_thJC

R_thJH

(per IGBT)

0.6 K/W

K/W

- battery charger

with heatsink compound (0.42 K/m.K; 50 µm)

1.2

Caution: These Devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

2002 POWERSEM reserves the right to change limits, test conditions and dimensions

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

12 3 4

中文翻译

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