YJ Planar Schottky Barrier Diode Die Specification
Anode
200V 20A, 102mil, Schottky barrier diode die based on silicon planar process
Part No.: PSB102H200AS-280A
Main Products Characterstics
• Average forward current: IF(AV) = 20 A
• Maximum operating junction temperature: Tj = 175 °C
• ESD rating: >2KV, per IEC61000-4-2 (Contact Discharge)
• Top metal: AL
Cathode
Maximum Ratings
Parameter
Static Electrical Characteristics (Ta = 25°C)
Value
Symbol
Rating
Parameter
Symbol
Spec
Typical
VRRM
IF(AV)
Repetitive peak reverse voltage
Average forward current
200 V
20 A
Reverse breakdown voltage
IR = 1mA
VBR
210 V
230V
Maximum forward voltage drop
Non−repetitive peak surge
current
(tp = 8.3 ms, halfwave, 1 cycle)
IFSM
150 A
IF =
VF
20 A
0.92V
3uA
0.88V
0.3uA
Pulse Test: tp = 300 μs, δ ≤ 2%
Tstg
Tj
Storage temperature range
-50 to +175 °C
175 °C
Maximum reverse current
VR = VRRM
IR
Maximum operating junction
temperature
Pulse Test: tp = 300 μs, δ ≤ 2%
Device Schematics and Outline Drawing
11 Mils
Die Thickness *
Die Size **
102 Mils
2*48.6*98 Mils
2*43.8*93.4 Mils
Top Metal Pad
Active Area
Space between
die
0.98 Mils
AL
Ag
Top Metal
Back Metal
Note: 1 * : Also can offer device with 8 mils thickness
2 **: Cutting street width is around 1.5 mils
Important Notice
Specification apply to die only. Actual performance may degrade when assembled.
Recommended Storage Environment:
Yangjie Electronics does not guarantee device performance after assembly.
All operating parameters must be validated for each customer application by customer's
technical experts.
Store in original container, in dessicated nitrogen, with no contamination.
Shelf life for parts stored in above condition is 2 years.
Data sheet information is subjected to change without notice.
If the storage is done in normal atmosphere shelf life is reduced to 6 months.
扬州扬杰电子科技股份有限公司
电话:0514-80982389
传真:0514-80980189
Yangzhou Yangjie Electronics Technology Co.,Ltd.
Yangzhou Yangjie Electronics Technology Co.,Ltd.
Rev.O 2021/07/28