YJ Planar Schottky Barrier Diode Die Specification
Anode
60V 1A, 30mil, Schottky barrier diode die based on silicon planar process
Part No.: PSB030L060SS-280A
Main Products Characterstics
• Average forward current: IF(AV) = 1 A
• Maximum operating junction temperature: Tj = 125 °C
• Top metal: Ag
Cathode
Maximum Ratings
Parameter
Static Electrical Characteristics (Ta = 25°C)
Value
Symbol
Rating
Parameter
Symbol
Spec
Typical
VRRM
IF(AV)
Repetitive peak reverse voltage
Average forward current
60 V
1 A
Reverse breakdown voltage
IR = 1mA
VBR
65 V
72V
Maximum forward voltage drop
Non−repetitive peak surge current
(tp = 8.3 ms, halfwave, 1 cycle)
IFSM
Tstg
Tj
30 A
-50 to +125 °C
125 °C
IF =
VF
1 A
0.65 V
50uA
0.62V
20uA
Pulse Test: tp = 300 μs, δ ≤ 2%
Storage temperature range
Maximum reverse current
VR = VRRM
IR
Maximum operating junction
temperature
Pulse Test: tp = 300 μs, δ ≤ 2%
Device Schematics and Outline Drawing
Top Metal
Pad
First Ring
Second Ring
Third Ring
11 Mils
Die Thickness *
Die Size **
30 Mils
26.8 Mils
23.3 Mils
Ag
Active
Area
Top Metal Pad
Active Area
Top Metal
Top Metal
Schottky Barrier
SiO2
Ag
Back Metal
Note: 1 * : Also can offer device with 10.5 mils thickness
2 **: Cutting street width is around 1.5 mils
Epi
Guard Ring
Die Size
Substrate
Back Metal
Important Notice
Specification apply to die only. Actual performance may degrade when assembled.
Recommended Storage Environment:
Yangjie Electronics does not guarantee device performance after assembly.
All operating parameters must be validated for each customer application by customer's
technical experts.
Store in original container, in dessicated nitrogen, with no contamination.
Shelf life for parts stored in above condition is 2 years.
Data sheet information is subjected to change without notice.
If the storage is done in normal atmosphere shelf life is reduced to 6 months.
扬州扬杰电子科技股份有限公司
电话:0514-80982389
传真:0514-80980189
Yangzhou Yangjie Electronics Technology Co.,Ltd.
Yangzhou Yangjie Electronics Technology Co.,Ltd.
Rev.O 2021/07/28