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PS9851-1

更新时间: 2024-09-08 22:44:23
品牌 Logo 应用领域
日电电子 - NEC 输出元件
页数 文件大小 规格书
10页 91K
描述
HIGH NOISE REDUCTION, 15 Mbps CMOS OUTPUT TYPE 8-PIN SSOP PHOTOCOUPLER

PS9851-1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SSOP-8
Reach Compliance Code:compliantHTS代码:8541.40.80.00
风险等级:5.26配置:COMPLEX
标称数据速率:15 MBps最大正向电流:0.02 A
最大绝缘电压:2500 VJESD-609代码:e0
元件数量:1最大通态电流:0.002 A
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:LOGIC IC OUTPUT OPTOCOUPLER最小供电电压:4.5 V
端子面层:Tin/Lead (Sn/Pb)

PS9851-1 数据手册

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PRELIMINARY DATA SHEET  
PHOTOCOUPLER  
PS9851-1,-2  
HIGH NOISE REDUCTION, 15 Mbps CMOS OUTPUT TYPE  
8-PIN SSOP PHOTOCOUPLER  
NEPOC Series−  
DESCRIPTION  
The PS9851-1, -2 are optically coupled isolators containing GaAlAs LED on the input side and a CMOS output IC  
on the output side.  
They are high common mode transient immunity (CMR), high-speed CMOS output type photocouplers designed for  
high-speed logic interface circuits.  
FEATURES  
High-speed response (15 Mbps)  
PIN CONNECTION  
• Operable at high temperature (40 to +100°C)  
(Top View)  
High common mode transient immunity (CMH, CML = 15 kV/µs TYP.)  
High isolation voltage (BV = 2 500 Vr.m.s.)  
Pulse width distortion (tPHLtPLH= 5 ns TYP.)  
Ordering number of tape product : PS9851-1-F3, F4: 1 500 pcs/reel  
: PS9851-2-F3, F4: 1 500 pcs/reel  
PS9851-1  
8
7
6
5
1. NC  
2. Anode  
3. Cathode  
4. NC  
5. GND  
Safety standards  
6. V  
O
7. NC  
8. VDD  
UL awaiting approved  
1
8
2
7
3
4
DIN EN60747-5-2 (VDE0884 Part2) awaiting approved  
PS9851-2  
6
5
1. Anode1  
2. Cathode1  
3. Cathode2  
4. Anode2  
5. GND  
APPLICATIONS  
FA Network  
6. V  
7. V  
O
2
1
Measurement equipment  
PDP  
O
8. VDD  
1
2
3
4
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PN10493EJ01V0DS (1st edition)  
Date Published May 2004 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2004  

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