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PS2532L1-1-V

更新时间: 2024-11-04 22:12:07
品牌 Logo 应用领域
日电电子 - NEC 光电输出元件分离技术隔离技术
页数 文件大小 规格书
16页 174K
描述
HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

PS2532L1-1-V 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, DIP-4Reach Compliance Code:compliant
风险等级:5.69Is Samacsys:N
其他特性:VDE APPROVEDColl-Emtr Bkdn Voltage-Min:300 V
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR标称电流传输比:4000%
最大暗电源:400 nA最大正向电流:0.08 A
最大绝缘电压:3750 VJESD-609代码:e0
元件数量:1最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:DARLINGTON OUTPUT OPTOCOUPLER
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

PS2532L1-1-V 数据手册

 浏览型号PS2532L1-1-V的Datasheet PDF文件第2页浏览型号PS2532L1-1-V的Datasheet PDF文件第3页浏览型号PS2532L1-1-V的Datasheet PDF文件第4页浏览型号PS2532L1-1-V的Datasheet PDF文件第5页浏览型号PS2532L1-1-V的Datasheet PDF文件第6页浏览型号PS2532L1-1-V的Datasheet PDF文件第7页 
DATA SHEET  
PHOTOCOUPLER  
PS2532-1,-2,-4,PS2532L-1,-2,-4  
HIGH COLLECTOR TO EMITTER VOLTATGE  
HIGH ISOLATION VOLTAGE  
NEPOCTM Series−  
MULTI PHOTOCOUPLER SIRIES  
DESCRIPTION  
The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode  
and an NPN silicon darlington connected phototransistor.  
The PS2532-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2532L-1, -2, -4 are lead bending type  
(Gull-wing) for surface mount.  
FEATURES  
High collector to emitter voltage (VCEO = 300 V)  
High Isolation voltage BV = 5 000 Vr.m.s.: standard products  
BV = 3 750 Vr.m.s.: VDE0884 approved products (Option)  
High current transfer ratio (CTR = 4 000 % TYP.)  
High-speed switching (tr, tf = 100 µs TYP.)  
Ordering number of taping product: PS2532L-1-E3, E4, F3, F4, PS2532L-2-E3, E4  
UL approved: File No. E72422 (S)  
BSI approved: No. 8221/8222  
NEMKO approved: No. 98101708  
SEMKO approved: No. 9824187/01-02  
DEMKO approved: No. 307863  
FIMKO approved: No. F1 11397  
VDE0884 approved (Option)  
APPLICATIONS  
Telephone, Exchange equipment  
FAX/MODEM  
The information in this document is subject to change without notice.  
Document No. P11434EJ5V0DS00 (5th edition)  
Date Published September 1998 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1990  
©

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