MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>
PS21A7A
TRANSFER-MOLD TYPE
INSULATED TYPE
PS21A7A
MAIN FUNCTION AND RATINGS
z 3 phase inverter with N-side open emitter structure
z 600V / 75A (CSTBT)
APPLICATION
z AC100 ~ 200Vrms class, motor control
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
● For P-side
● For N-side
: Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection
: Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),
● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)
● Temperature monitoring : Analog output of LVIC temperature
● Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)
● UL Approved : File No. E80276
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCC
Parameter
Supply voltage
Condition
Applied between P-NU,NV,NW
Applied between P-NU,NV,NW
Ratings
450
Unit
V
VCC(surge)
VCES
±IC
Supply voltage (surge)
500
V
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
600
V
TC= 25°C
75
A
±ICP
TC= 25°C, less than 1ms
TC= 25°C, per 1 chip
150
A
PC
162
W
°C
Tj
Junction temperature
-20~+150
CONTROL (PROTECTION) PART
Symbol
VD
Parameter
Control supply voltage
Control supply voltage
Input voltage
Condition
Applied between VP1-VPC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC
Applied between FO-VNC
Ratings
20
Unit
V
VDB
VIN
VFO
IFO
20
V
-0.5~VD+0.5
-0.5~VD+0.5
1
V
Fault output supply voltage
Fault output current
V
Sink current at FO terminal
mA
V
VSC
Current sensing input voltage
Applied between CIN-VNC
-0.5~VD+0.5
TOTAL SYSTEM
Symbol
Parameter
Condition
VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, less than 2μs
Ratings
400
Unit
V
Self protection supply voltage limit
(Short circuit protection capability)
Module case operation temperature
VCC(PROT)
TC
(Note 1)
-20~+100
-40~+125
°C
°C
Tstg
Storage temperature
60Hz, Sinusoidal, AC 1minute, between connected all
pins and heat-sink plate
Viso
Isolation voltage
2500
Vrms
Note 1: Tc measurement point is described in Fig.1.
THERMAL RESISTANCE
Limits
Typ.
Symbol
Parameter
Condition
Min.
Unit
Max.
Rth(j-c)Q
Rth(j-c)F
Junction to case thermal
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
-
-
-
-
0.77
1.25
°C/W
°C/W
resistance
(Note 2)
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface
of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the
thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2°C/W (per 1/6 module, grease thickness: 20μm, thermal
conductivity: 1.0W/m•k).
March 2011
1