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PS21A79

更新时间： 2024-11-02 12:23:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 运动控制电子器件信号电路电动机控制
页数 文件大小 规格书
10页 446K
描述
Dual-In-Line Package Intelligent Power Module

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中文翻译

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PS21A79 技术参数

生命周期：Active零件包装代码：DMA
包装说明：,针数：42
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：1.56
Is Samacsys：N模拟集成电路 - 其他类型：AC MOTOR CONTROLLER
JESD-30 代码：R-XDMA-T42长度：79 mm
功能数量：1端子数量：42
最大输出电流：100 A封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
认证状态：Not Qualified最大供电电压 (Vsup)：16.5 V
最小供电电压 (Vsup)：13.5 V标称供电电压 (Vsup)：15 V
表面贴装：NO技术：HYBRID
端子形式：THROUGH-HOLE端子位置：DUAL
宽度：31 mmBase Number Matches：1

PS21A79 数据手册

 浏览型号PS21A79的Datasheet PDF文件第2页浏览型号PS21A79的Datasheet PDF文件第3页浏览型号PS21A79的Datasheet PDF文件第4页浏览型号PS21A79的Datasheet PDF文件第5页浏览型号PS21A79的Datasheet PDF文件第6页浏览型号PS21A79的Datasheet PDF文件第7页 
MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>  
PS21A79  
TRANSFER-MOLD TYPE  
INSULATED TYPE  
PS21A79  
MAIN FUNCTION AND RATINGS  
z 3 phase inverter with N-side open emitter structure  
z 600V / 50A (CSTBT)  
APPLICATION  
z AC100 ~ 200Vrms class, motor control  
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS  
● For P-side  
● For N-side  
: Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection  
: Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),  
● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)  
● Temperature monitoring : Analog output of LVIC temperature  
● Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)  
● UL Approved : File No. E80276  
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)  
INVERTER PART  
Symbol  
VCC  
Parameter  
Supply voltage  
Condition  
Applied between P-NU,NV,NW  
Applied between P-NU,NV,NW  
Ratings  
450  
Unit  
V
VCC(surge)  
VCES  
±IC  
Supply voltage (surge)  
500  
V
Collector-emitter voltage  
Each IGBT collector current  
Each IGBT collector current (peak)  
Collector dissipation  
600  
V
TC= 25°C  
50  
A
±ICP  
TC= 25°C, less than 1ms  
TC= 25°C, per 1 chip  
100  
A
PC  
142  
W
°C  
Tj  
Junction temperature  
-20~+150  
CONTROL (PROTECTION) PART  
Symbol  
VD  
Parameter  
Control supply voltage  
Control supply voltage  
Input voltage  
Condition  
Applied between VP1-VPC, VN1-VNC  
Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS  
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC  
Applied between FO-VNC  
Ratings  
20  
Unit  
V
VDB  
VIN  
VFO  
IFO  
20  
V
-0.5~VD+0.5  
-0.5~VD+0.5  
1
V
Fault output supply voltage  
Fault output current  
V
Sink current at FO terminal  
mA  
V
VSC  
Current sensing input voltage  
Applied between CIN-VNC  
-0.5~VD+0.5  
TOTAL SYSTEM  
Symbol  
Parameter  
Condition  
VD = 13.5~16.5V, Inverter Part  
Tj = 125°C, non-repetitive, less than 2μs  
Ratings  
400  
Unit  
V
Self protection supply voltage limit  
(Short circuit protection capability)  
Module case operation temperature  
VCC(PROT)  
TC  
(Note 1)  
-20~+100  
-40~+125  
°C  
°C  
Tstg  
Storage temperature  
60Hz, Sinusoidal, AC 1minute, between connected all  
pins and heat-sink plate  
Viso  
Isolation voltage  
2500  
Vrms  
Note 1: Tc measurement point is described in Fig.1.  
THERMAL RESISTANCE  
Limits  
Typ.  
Symbol  
Parameter  
Condition  
Min.  
Unit  
Max.  
Rth(j-c)Q  
Rth(j-c)F  
Junction to case thermal  
Inverter IGBT part (per 1/6 module)  
Inverter FWDi part (per 1/6 module)  
-
-
-
-
0.88  
1.78  
°C/W  
°C/W  
resistance  
(Note 2)  
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface  
of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the  
thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2°C/W (per 1/6 module, grease thickness: 20μm, thermal  
conductivity: 1.0W/m•k).  
March 2011  
1
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