Datasheet > PRMH11Z

PRMH11Z

更新时间： 2024-11-19 22:59:11

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其他 - ETC		/
页数	文件大小	规格书
13页	255K
描述
PRMH11/SOT1268/DFN1412-6

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数据手册

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PRMH11Z 数据手册

PRMH11

50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors

(RET)

14 September 2018

Product data sheet

1. General description

NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268)

leadless Surface-Mounted Device (SMD) plastic package.

PNP/PNP complement: PRMB11.

NPN/PNP complement: PRMD3.

2. Features and benefits

•

100 mA output current capability

•

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

Low package height of 0.5 mm

AEC-Q101 qualified

3. Applications

•

Digital applications

Cost-saving alternative to BC847/BC857 series in digital applications

Control of IC inputs

Switching loads

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

I_O

output current

DC current gain

bias resistor 1

bias resistor ratio

100

h_FE

V_CE= 5 V; I_C= 5 mA; T_amb= 25 °C

T_amb= 25 °C

[1]

1.2

kΩ

R2/R1

0.8

[1] See section "Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...13

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