Datasheet > PR802BA33

PR802BA33

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
6页	330K
描述
PowerFET

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中文翻译

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数据手册

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PR802BA33 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PR802BA33

NIKO-SEM

PowerFET

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

74A

4mΩ

Features

• Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• 100% UIS Tested & 100% Rg Tested.

• Patent No. US9,947,551.

Applications

• Protection Circuits Applications.

• Computer for DC to DC Converters Applications.

G. GATE

D. DRAIN

S. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

±20

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current⁴

I_D

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

110

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

28.8

Power Dissipation³

P_D

3.1

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

J-13-3

REV 1.0

12 3 4 5 6

中文翻译

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