Datasheet > PQMH10

PQMH10

更新时间： 2024-09-24 11:13:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	702K
描述
NPN/NPN resistor-equipped transistors; R1=2.2kΩ,R2=47kΩProduction

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PQMH10 数据手册

PQMH10

NPN/NPN resistor-equipped transistors;

R1 = 2.2 kΩ, R2 = 47 kΩ

4 November 2015

Product data sheet

1. General description

NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6

(SOT1216) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PQMD10.

2. Features and benefits

100 mA output current capability

Built-in bias resistors

Simplifies circuit design

Low package height of 0.37 mm

Reduces component count

Reduces pick and place costs

AEC-Q101 qualified

•

3. Applications

Low current peripheral driver

Control of IC inputs

Replaces general-purpose transistors in digital applications

Mobile applications

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

I_O

output current

100

Per transistor

bias resistor 1

T_amb= 25 °C

[1]

1.54

2.2

2.86

kΩ

R2/R1

bias resistor ratio

[1] See section "Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...14

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