Datasheet > PQ6X6JN

PQ6X6JN

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
2页	208K
描述
WLCSP(10pin)

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中文翻译

获取价格

数据手册

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PQ6X6JN 数据手册

Common Drain N-Channel

Power MOSFET

PQ6X6JN

WLCSP

NIKO-SEM

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)SSS

12V

R_SS(ON)

I_S

19A

2.75mΩ

1,2,4,5. Source1

3. Gate1

6,7,9,10. Source2

8. Gate2

Top view

Bottom view

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Source-Source Voltage

SYMBOL

V_SSS

V_GSS

I_S

LIMITS

UNITS

±8

Gate-Source Voltage

Continuous Source Current

Pulsed Source Current¹

I_SP

100

Total Dissipation²

Thermal Resistance²

P_T

1.8

°C / W

°C

R_JA

T_j, T_stg

Operating Junction & Storage Temperature Range

-55 to 150

¹PW≤10μs, duty cycle≤1%.

²When mounted on 1in²FR-4 board.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Source-Source Breakdown

Voltage

V_(BR)SSS

V_GS(th)

I_GSS

I_SSS

V_GS= 0V, I_S= 1mA

Gate Threshold Voltage

V_SS= V_GS, I_S= 1mA

V_SS= 0V, V_GS= ±8V

V_SS= 0V, V_GS= ±5V

V_SS= 12V, V_GS= 0V

V_GS= 4.5V, I_S= 6A

V_GS= 3.8V, I_S= 6A

V_GS= 3.1V, I_S= 6A

V_GS= 2.5V, I_S= 6A

0.9

1.4

±10

±1

Gate-Source Leakage

A

Zero Gate Voltage Source Current

2.1 2.75

2.2 2.85

2.4 3.95

Source-Source On-State

Resistance¹

mΩ

R_SS(ON)

3.1

6.1

N-23-2

REV 0.8

中文翻译

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