Datasheet > PP5S6JB

PP5S6JB

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	355K
描述
PDFN 1.0x1.0

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中文翻译

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数据手册

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PP5S6JB 数据手册

Dual N-Channel Enhancement

Mode Field Effect Transistor

PP5S6JB

NIKO-SEM

PDFN 1.0x1.0

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

0.87A

450mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• ESD Protection - HBM Class : 2.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

• Space Limit & Smart Devices Applications.

G: GATE

D: DRAIN

S: SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±12

UNITS

V_GS

T_A= 25 °C

T_A= 70 °C

0.87

Continuous Drain Current²

Pulsed Drain Current¹

Power Dissipation³

I_D

I_DM

0.7

1.8

T_A= 25 °C

T_A= 70 °C

0.69

P_D

°C

0.44

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

180

225

t ≦10s

Junction-to-Ambient

°C / W

Steady-State

¹Limited by maximum junction temperature.

²Limited by package.

³The Power dissipation is based on R_JAt ≦10s value.

M-20-4

REV1.0

12 3 4

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