Datasheet > PP1410AF

PP1410AF

更新时间： 2024-05-23 22:23:50

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	325K
描述
TO-220F

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中文翻译

获取价格

数据手册

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PP1410AF 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PP1410AF

NIKO-SEM

TO-220F

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

34A

14mΩ

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

100

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 1mH

E_AS

T_C= 25 °C

T_C= 100 °C

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 175

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL MAXIMUM

UNITS

°C / W

Junction-to-Ambient²

62.5

Steady-State

R_JA

R_JC

Junction-to-Case

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V_(BR)DSS

V_GS(th)

100

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

3.1

L-25-2

REV 1.1

12 3 4

中文翻译

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