Datasheet > PP1410AD

PP1410AD

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	311K
描述
TO-252

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中文翻译

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数据手册

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PP1410AD 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PP1410AD

NIKO-SEM

TO-252

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

1.GATE

2.DRAIN

3.SOURCE

45A

14mΩ

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

100

UNITS

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

150

12.4

76.8

L = 1mH

E_AS

T_C= 25 °C

T_C= 100 °C

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 175

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL MAXIMUM

UNITS

°C / W

Junction-to-Ambient²

62.5

2.3

Steady-State

R_JA

R_JC

Junction-to-Case

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

100

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±20V

2.4 3.1

±100 nA

N-5-4

REV 1.3

12 3 4

中文翻译

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