Datasheet > PNZ106(PN106)

PNZ106(PN106)

更新时间： 2024-11-20 23:28:59

品牌	Logo	应用领域
其他 - ETC		晶体光电晶体管光电晶体管
页数	文件大小	规格书
3页	341K
描述
PNZ106 (PN106) - Silicon NPN Phototransistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PNZ106(PN106) 数据手册

Phototransistors

PNZ106 (PN106)

Silicon NPN Phototransistor

Unit : mm

ø4.6±0.15

Glass lens

For optical control systems

Features

High sensitivity

Fast response : t_r= 3.5 µs (typ.)

3-ø0.45±0.05

2.54±0.25

Narrow directional sensitivity for effective use of light input

Signal mixing capability using base pin

1.0

0.2

0.15

3˚

1.0

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

V_CBO

V_ECO

V_EBO

I_C

Ratings

Unit

1: Emitter

2: Base

Collector to emitter voltage

Collector to base voltage

Emitter to collector voltage

Emitter to base voltage

Collector current

ø5.75 max.

2: Collector

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

100

T_opr

–25 to +85

–30 to +100

T_stg

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

I_CEO

I_CE(L)

λ_P

Conditions

min

typ

max

100

Unit

deg.

µs

V_CE= 10V

Collector photo current

Peak sensitivity wavelength

Acceptance half angle

Rise time

V_CE= 10V, L = 100 lx^*1

0.3

0.6

800

V_CE= 10V

t_r^*2

t_f^*2

Measured from the optical axis to the half power point

3.5

5.0

0.2

V_CC= 10V, I_CE(L)= 1mA, R_L= 100Ω

Fall time

µs

Collector saturation voltage

V_CE(sat)I_CE(L)= 1 mA, L = 1000 lx^*1

0.4

^*1Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Note) The part number in the parenthesis shows conventional part number.

12 3

中文翻译

下载PDF

与PNZ106(PN106)相关器件

型号	品牌	获取价格	描述	数据表
PNZ107	PANASONIC	获取价格	Silicon NPN Phototransistors
PNZ107(PN107)	ETC	获取价格	Opto-Electronic Device - Photo Detectors - Phototransistors
PNZ107/PNZ108(PN107/PN108)	ETC	获取价格	PNZ107. PNZ108 (PN107. PN108) - Silicon NPN Phototransistors
PNZ107F	PANASONIC	获取价格	Silicon NPN Phototransistors
PNZ107F(PN107F)	ETC	获取价格	Opto-Electronic Device - Photo Detectors - Phototransistors
PNZ107F/PNZ108F(PN107F/PN108F)	ETC	获取价格	PNZ107F. PNZ108F (PN107F. PN108F) - Silicon NPN Phototransistors
PNZ108	PANASONIC	获取价格	Silicon NPN Phototransistors
PNZ108(PN108)	ETC	获取价格	Opto-Electronic Device - Photo Detectors - Phototransistors
PNZ108CL	PANASONIC	获取价格	Silicon NPN Phototransistor
PNZ108CL(PN108CL)	ETC	获取价格	光デバイス－受光素子－フォトトランジスタ