PNZ102F

更新时间： 2024-11-20 22:26:23

品牌	Logo	应用领域
松下 - PANASONIC		晶体光电晶体管光电晶体管
页数	文件大小	规格书
3页	53K
描述
Silicon NPN Phototransistors

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中文翻译

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数据手册

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PNZ102F 数据手册

Phototransistors

PNA1401LF, PNZ102F

Silicon NPN Phototransistors

Unit : mm

Glass window

PNA1401LF

ø4.6±0.15

For optical control systems

Features

Flat window design which is suited to optical systems

Low dark current : I_CEO= 5 nA (typ.)

Fast response : t_r, t_f= 3 µs (typ.)

Wide directional sensitivity

2-ø0.45±0.05

2.54±0.25

Base pin for easy circuit design (PNZ102F)

1.0

0.2

0.15

3˚

1.0

Absolute Maximum Ratings (Ta = 25˚C)

1: Emitter

ø5.75 max.

2: Collector

Parameter

Collector to emitter voltage

Collector to base voltage

Emitter to collector voltage

Emitter to base voltage

Collector current

Symbol

Ratings

Unit

V_CEO

V_CBO

Unit : mm

PNZ102F

V_ECO

ø4.6±0.15

Glass window

V_EBO

I_C

P_C

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

150

T_opr

T_stg

–25 to +85

–30 to +100

3-ø0.45±0.05

2.54±0.25

^*PNZ102F only

1.0

0.2

0.15

3˚

1.0

1: Emitter

2: Base

ø5.75 max.

3: Collector

12 3

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