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PN4393

更新时间: 2024-02-12 08:49:59
品牌 Logo 应用领域
Linear Systems 晶体开关晶体管
页数 文件大小 规格书
3页 410K
描述
SINGLE N-CHANNEL JFET SWITCH

PN4393 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:compliant风险等级:5.03
配置:SINGLE最大漏源导通电阻:100 Ω
FET 技术:JUNCTION最大反馈电容 (Crss):3.5 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PN4393 数据手册

 浏览型号PN4393的Datasheet PDF文件第2页浏览型号PN4393的Datasheet PDF文件第3页 
2N/PN/SST4391  
SERIES  
SINGLE N-CHANNEL JFET SWITCH  
Linear Integrated Systems  
FEATURES  
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393  
LOW ON RESISTANCE  
FAST SWITCHING  
rDS(on) 30Ω  
tON 15ns  
2N SERIES  
PN SERIES SST SERIES  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Maximum Temperatures  
TO-18  
TO-92  
SOT-23  
BOTTOM VIEW  
BOTTOM VIEW  
TOP VIEW  
1
3
2
D
S
D
S
2
1
3
G
G
D
1
S
2
G
3
Storage Temperature (2N)  
-65 to 200°C  
-55 to 150°C  
-55 to 200°C  
-55 to 150°C  
Storage Temperature (PN/SST)  
Junction Operating Temperature (2N)  
Junction Operating Temperature (PN/SST)  
Maximum Power Dissipation  
Continuous Power Dissipation (2N)  
Continuous Power Dissipation (PN/SST)  
Maximum Currents  
1800mW  
350mW  
Gate Current  
50mA  
Maximum Voltages  
Gate to Drain or Source (2N/PN)  
Gate to Drain or Source (SST)  
-40V  
-35V  
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)  
4391  
4392  
4393  
SYM.  
CHARACTERISTIC  
TYP  
UNIT CONDITIONS  
MIN MAX MIN MAX MIN MAX  
2N/PN  
SST  
2N/PN  
SST  
-40  
-35  
-4  
-40  
-35  
-2  
-40  
-35  
-0.5  
-0.5  
Gate to Source  
BVGSS  
IG = -1µA, VDS = 0V  
Breakdown Voltage  
-10  
-10  
1
-5  
-5  
1
-3  
-3  
1
VDS = 20V, ID = 1nA  
VDS = 15V, ID = 10nA  
IG = 1mA, VDS = 0V  
VGS = 0V, ID = 3mA  
VGS = 0V, ID = 6mA  
VGS = 0V, ID = 12mA  
Gate to Source  
Cutoff Voltage  
VGS(off)  
VGS(F)  
-4  
-2  
V
Gate to Source Forward Voltage  
0.7  
0.25  
0.3  
0.4  
VDS(on) Drain to Source On Voltage  
0.4  
0.35  
0.4  
150  
100  
2N  
PN  
SST  
2N/SST  
PN  
50  
50  
50  
25  
25  
25  
75  
100  
5
5
5
30  
60  
Drain to Source  
IDSS  
mA  
pA  
VDS = 20V, VGS = 0V  
Saturation Current2  
-5  
-5  
-5  
-100  
-1000  
-100  
-1000  
-100  
-1000  
IGSS  
IG  
Gate Leakage Current  
Gate Operating Current  
VGS = -20V, VDS = 0V  
VDG = 15V, ID = 10mA  
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  

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