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PN4391-D28Z PDF预览

PN4391-D28Z

更新时间: 2024-11-05 07:06:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 小信号场效应晶体管
页数 文件大小 规格书
10页 473K
描述
Transistor

PN4391-D28Z 数据手册

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MMBF4391  
MMBF4392  
MMBF4393  
PN4391  
PN4392  
PN4393  
G
S
TO-92  
G
S
D
SOT-23  
Mark: 6J / 6K / 6G  
D
NOTE: Source & Drain  
are interchangeable  
N-Channel Switch  
This device is designed for low level analog switching, sample  
and hold circuits and chopper stabalized amplifiers. Sourced  
from Process 51. See J111 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
30  
- 30  
V
V
VGS  
Gate-Source Voltage  
IGF  
Forward Gate Current  
50  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN4391-4393  
*MMBF4391-4393  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
125  
350  
2.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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