Datasheet > PN4275_01

PN4275_01

更新时间： 2024-02-28 15:31:57

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关晶体管
页数	文件大小	规格书
7页	299K
描述
NPN Switching Transistor

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PN4275_01 数据手册

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PN4275

TO-92

NPN Switching Transistor

This device is designed for high speed saturated switching

applications at currents to 100 mA. Sourced from Process 21.

See PN2369A for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

4.5

Collector Current - Continuous

Operating and Storage Junction Temperature Range

200

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN4275

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

350

2.8

125

mW/°C

°C/W

R_θ

Thermal Resistance, Junction to Ambient

357

R_θ

°C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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PN4275D26Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
PN4275D74Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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