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PN3642_02

更新时间： 2024-09-25 06:04:31
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飞兆/仙童 - FAIRCHILD 放大器
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描述
NPN General Purpose Amplifier

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PN3642_02 数据手册

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PN3642  
NPN General Purpose Amplifier  
•
This device is designed for use as general purpose amplifiers and  
switches requiring collector currents to 300mA.  
TO-92  
1. Emitter 2. Base 3. Collector  
1
Absolute Maximum Ratings* T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
45  
Units  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CEO  
60  
CBO  
EBO  
5.0  
V
I
- Continuous  
500  
mA  
°C  
C
T
T
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
J, STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 10mA, I = 0  
45  
60  
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CES  
C
C
E
B
= 10µA, I = 0  
E
= 10µA, I = 0  
5.0  
C
I
V
V
= 50V, I = 0  
50  
1.0  
nA  
µA  
CB  
CB  
E
= 50V, I = 0, T = 65°C  
E
A
On Characteristics  
h
DC Current Gain  
V
V
= 10V, I = 150mA  
40  
15  
120  
FE  
CE  
CE  
C
= 10V, I = 500mA  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
= 150mA, I = 15mA  
0.22  
V
CE  
C
B
Small Signal Characteristics  
C
Output Capacitance  
V
= 10V, f = 140KHz  
CB  
8.0  
pF  
ob  
fe  
h
Small Signal Current Gain  
Amplifier Power Gain  
I
= 50mA, V = 5.0V, f = 100MHz  
1.5  
10  
C
CE  
G
V
= 15V, I = 0, R = 140Ω  
dB  
%
pe  
CE  
C
G
f = 30MHz, R = 260Ω  
L
η
Collector Efficientcy  
V
= 15V, I = 0, R = 140Ω  
60  
CE  
C
G
f = 30MHz, R = 260Ω  
L
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%  
©2002 Fairchild Semiconductor Corporation  
Rev. B, November 2002  
1234

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