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PN3569/D81Z PDF预览

PN3569/D81Z

更新时间: 2024-11-27 21:07:27
品牌 Logo 应用领域
德州仪器 - TI 开关晶体管
页数 文件大小 规格书
9页 719K
描述
500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

PN3569/D81Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.66
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzBase Number Matches:1

PN3569/D81Z 数据手册

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PN3569/D89Z TI

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500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
PN3569LEADFREE CENTRAL

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Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,