Datasheet > PN3568L34Z

PN3568L34Z

更新时间： 2024-11-27 15:48:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关晶体管
页数	文件大小	规格书
7页	293K
描述
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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技术参数
数据手册

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PN3568L34Z 技术参数

生命周期：	Obsolete	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.65
最大集电极电流 (IC)：	1 A	集电极-发射极最大电压：	60 V
配置：	SINGLE	最小直流电流增益 (hFE)：	40
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

PN3568L34Z 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

PN3568

TO-92

NPN General Purpose Amplifier

This device is designed for general purpose, medium power

amplifiers and switches requiring collector currents to 500 mA.

Sourced from Process 12. SeeTN3019A for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.0

-55 to +150

°C

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN3568

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

mW/ C

R_θ

Thermal Resistance, Junction to Case

83.3

°C/W

R_θ

Thermal Resistance, Junction to Ambient

200

°C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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