5秒后页面跳转
PN3567-D26Z PDF预览

PN3567-D26Z

更新时间: 2024-11-27 20:45:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 26K
描述
Transistor

PN3567-D26Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84最大集电极电流 (IC):0.5 A
配置:Single最小直流电流增益 (hFE):40
JESD-609代码:e3最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.6 W
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)标称过渡频率 (fT):60 MHz
Base Number Matches:1

PN3567-D26Z 数据手册

 浏览型号PN3567-D26Z的Datasheet PDF文件第2页浏览型号PN3567-D26Z的Datasheet PDF文件第3页浏览型号PN3567-D26Z的Datasheet PDF文件第4页 
PN3567  
NPN General Purpose Amplifier  
This device is for use as a medium amplifier and switch requiring  
collector currents up 300mA.  
Sourced from process 19.  
TO-92  
1. Emitter 2. Base 3. Collector  
1
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
V
V
CEO  
80  
5
CBO  
EBO  
V
I
- Continuous  
600  
mA  
°C  
C
T
T
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
J, STG  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 30mA, I = 0  
40  
80  
5
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= 100µA, I = 0  
E
= 10µA, I = 0  
C
I
V
V
= 40V, I = 0  
50  
5
nA  
µA  
CB  
CB  
E
= 40V, I = 0, T = 75°C  
E
A
I
Emitter Cut-off Current  
V
= 4V, I = 0  
25  
nA  
EBO  
EB  
C
On Characteristics  
h
DC Current Gain  
V
V
= 1V, I = 150mA  
40  
40  
120  
FE  
CE  
CE  
C
= 1V, I = 30mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage *  
Base-Emitter On Voltage  
I
= 150mA, I = 15mA  
0.25  
1.1  
V
V
CE  
C
B
V
= 1V, I = 150mA  
C
BE  
CE  
Small Signal Characteristics  
C
Output Capacitance  
V
V
= 10V, I = 0  
20  
80  
pF  
obo  
CB  
EB  
E
C
Input Capacitance  
= 0.5V, I = 0  
ibo  
C
* Pulse Test: Pulse Width 300ms, Duty Cycle 2.0%  
©2002 Fairchild Semiconductor Corporation  
Rev. A1, November 2002  

与PN3567-D26Z相关器件

型号 品牌 获取价格 描述 数据表
PN3567-D27Z FAIRCHILD

获取价格

Transistor
PN3567LEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
PN3567PBFREE CENTRAL

获取价格

Small Signal Bipolar Transistor,
PN3567TRA CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
PN3567TRB CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
PN3567TRELEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
PN3567TRF CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
PN3567TRG CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
PN3568 MICRO-ELECTRONICS

获取价格

NPN SILICON TRANSISTOR
PN3568 CENTRAL

获取价格

Small Signal Transistors