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PN2222-H PDF预览

PN2222-H

更新时间: 2024-11-27 10:07:07
品牌 Logo 应用领域
美微科 - MCC 晶体放大器小信号双极晶体管
页数 文件大小 规格书
2页 239K
描述
NPN General Purpose Amplifier

PN2222-H 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
Is Samacsys:N集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

PN2222-H 数据手册

 浏览型号PN2222-H的Datasheet PDF文件第2页 
M C C  
PN2222-L  
PN2222-H  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Through Hole Package  
Capable of 625mWatts of Power Dissipation  
Collector-current :0.6A  
Operating and storage junction temperature range:  
NPN General  
Purpose Amplifier  
°C  
Τj.Tstg:-55 to+150  
°C  
x
·
Marking:Type number  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-92  
A
·
·
E
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
B
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
Collector-Emitter Breakdown Voltage  
(IC=10mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=10µAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=10µAdc, IC=0)  
30  
60  
Vdc  
Vdc  
5.0  
Vdc  
I
Base Cutoff Current  
(VCB=50Vdc, IE=0)  
Collector Cutoff Current  
(VCB=3.0Vdc, IC=0)  
0.1  
0.1  
uAdc  
uAdc  
cBo  
C
ICEO  
ON CHARACTERISTICS  
hFE  
DC Current Gain  
300  
hFE(1) (IC=1.0mAdc, VCE=10Vdc)  
100  
60  
hFE(2)  
(IC=150mAdc, VCE=10Vdc)  
D
VCE(sat)  
Collector-Emitter Saturation Voltage  
(IC=500mAdc, IB=50mAdc)  
Vdc  
1.0  
2.0  
VBE(sat)  
Base-Emitter Saturation Voltage  
(IC=500mAdc, IB=50mAdc)  
Vdc  
E
B
G
fT  
Transition frequency  
C
(IC=20mAdc, VCE=20Vdc, f=100MHz)  
300  
MHz  
DIMENSIONS  
CLASSIFICATION OF hFE(1)  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
MAX  
.185  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
MAX  
4.70  
4.70  
--------  
0.56  
3.68  
2.67  
NOTE  
L
Rank  
H
.185  
-------  
.020  
.145  
.105  
Range  
100-200  
200-300  
E
G
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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