PN163-(NC)

更新时间： 2024-11-20 13:12:27

品牌	Logo	应用领域
松下 - PANASONIC		晶体光电晶体管光电晶体管
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中文翻译

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数据手册

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PN163-(NC) 数据手册

Phototransistors

PN163NC

Silicon NPN Phototransistor

Unit : mm

1.95±0.25

For optical control systems

1.4±0.2

3.0±0.3

ø1.1

R0.5

0.9

0.5

Features

High sensitivity

Fast response : t_r= 4 µs (typ.)

Adoption of visible light cutoff resin

Ultraminiature, thin side-view type package

2-0.5±0.15

0.3±0.15

2.54

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

I_C

Ratings

Unit

1: Collector

2: Emitter

Collector to emitter voltage

Collector current

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

T_opr

–25 to +85

–30 to +100

T_stg

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

Conditions

min

typ

max

0.2

Unit

µA

deg.

µs

I_CEO

V_CE= 10V

Sensitivity to infrared emitters

Peak sensitivity wavelength

Acceptance half angle

Rise time

S_IR

V_CE= 10V, H = 15µW/cm²

λ_P

t_r^*2

t_f^*2

V_CE= 10V

850

Measured from the optical axis to the half power point

V_CC= 10V, I_CE(L)= 5mA

R_L= 100Ω

Fall time

µs

Collector saturation voltage V_CE(sat)I_CE(L)= 3µA, H = 15µW/cm²

0.5

^*1Measurements were made using infrared light (λ = 940 nm) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

中文翻译

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