Datasheet > PN150

PN150

更新时间： 2024-11-20 10:07:07

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	102K
描述
Silicon planar type For optical control systems

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PN150 数据手册

Phototransistors

PNZ150 (PN150)

Silicon planar type

Unit: mm

4.5±±.3

4.2±±.3

(2.3) (1.9)

For optical control systems

φ3.5±±.2

■ Features

• High sensitivity

• Wide spectral sensitivity characteristics, suited for detecting GaAs

LEDs

2-±.98±±.2

2-±.45±±.15

• Low dark current

• Side-view plastic mold type package

±.45±±.15

(2.54)

(1.2)

■ Absolute Maximum Ratings T_a= 25°C

(R1.75)

Parameter

Symbol

Rating

Unit

Collector-emitter voltage (Base open) V_CEO

Collector current

I_C

°C

1: Emitter

2: Collector

LSTLR102-003 Package

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

100

T_opr

T_stg

−25 to +85

−30 to +100

°C

■ Electrical-Optical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CE(L)

I_CEO

λ_p

Conditions

V_CE= 10 V, L = 500 lx

V_CE= 10 V

Min

Typ

3.0

Max

Unit

µA

Photocurrent ^*

1.0

Dark current

0.01

800

1.00

Peak emission wavelength

Half-power angle

V_CE= 10 V

The angle from which photocurrent

becomes 50%

Rise time ^*

t_r

t_f

V_CC= 10 V, I_CE(L)= 5 mA, R_L= 100 Ω

µs

Fall time ^*

Collector-emitter saturation voltage ^*

V_CE(sat)I_CE(L)= 1 mA, L = 1000 lx

0.2

0.5

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.

3. This device is designed be dis regarded radiation.

4. 1: Source: Tungsten (color temperature 2856 K)

2: Switching time measurement circuit

Sig. in

V_CC

t_r: Rise time

t_f: Fall time

(Input pulse)

90%

10%

Sig. out

(Output pulse)

50 Ω

R_L

t_r

t_f

Note) The part number in the parenthesis shows conventional part number.

Publication date: April 2004

SHE00018BED

12 3

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