Phototransistors
PNZ147 (PN147)
Silicon NPN Phototransistor
Unit : mm
For optical control systems
Type number : Emitter mark (Green)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
Features
High sensitivity
ø1.8
1
2
Wide spectral sensitivity, matched to GaAs LEDs
Fast response : tr, tf = 3 µs (typ.)
45˚
1.8 2.8±0.2 1.8
Small size designed for easier mounting to printed circuit board
R0.9
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
VCEO
VECO
IC
Ratings
Unit
V
Collector to emitter voltage
Emitter to collector voltage
Collector current
20
5
20
V
1: Collector
2: Emitter
mA
mW
˚C
Collector power dissipation
Operating ambient temperature
Storage temperature
PC
50
Topr
–25 to +85
–30 to +100
Tstg
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Dark current
Symbol
Conditions
min
typ
0.01
12
max
Unit
µA
µA
mA
nm
deg.
µs
ICEO
VCE = 10V
0.5
*3
ICE(L)1
VCE = 10V, L = 2 lx*1
VCE = 10V, L = 500 lx*1
VCE = 10V
3
Collector photo current
ICE(L)2
λP
3.5
800
24
Peak sensitivity wavelength
Acceptance half angle
Response time
θ
Measured from the optical axis to the half power point
tr, tf*2
VCC = 10V, ICE(L) = 5mA, RL = 100Ω
3
10
Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 1000 lx*1
0.2
0.5
V
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
VCC
td : Delay time
(Input pulse)
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
90%
10%
Sig.OUT
(Output pulse)
td
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
50Ω
RL
tr
tf
*3
I
Classifications
Class
CE(L)
Q
R
S
ICE(L) (µA)
3.0 to 11.0
7.0 to 24.0
>16.0
Note) The part number in the parenthesis shows conventional part number.
1